Isotopic mass effects for low-energy channeling in a silicon crystal

被引：1

作者：

Zheng, Li-Ping ^{[1
,2
]}

Zhu, Zhi-Yuan ^{[1
]}

Li, Yong ^{[1
]}

Yan, Long ^{[1
]}

Zhu, De-Zhang ^{[1
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Appl Phys, Shanghai 201800, Peoples R China

[2] Chinese Acad Sci, Int Ctr Mat Phys, Shenyang 110016, Peoples R China

来源：

RADIATION EFFECTS AND DEFECTS IN SOLIDS | 2011年 / 166卷 / 11期

关键词：

mass effect; channeling; silicon crystal; CHARGED-PARTICLES; MOLECULAR-DYNAMICS; CARBON NANOTUBES; CRITICAL ANGLES; HEAVY-IONS; DEPENDENCE; ATOMS; DISTRIBUTIONS; RADIATION; PROTONS;

D O I：

10.1080/10420150.2010.502172

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

Monte Carlo (MC) simulations have been used to study the low-energy channeling of B-10 and B-11 ions along the [100] axis in Si crystal. MC simulations show that the critical angle Psi(C) approximate to 15.3(keV/E)(1/2) (in degrees) for the channeling of isotopic B-10 ions and Psi(C) = 14.5(keV/E)(1/2) (in degrees) for the channeling of isotopic B-11 ions, where E is the incident energy. This means that (Psi(C) (for 10B ions)/Psi(C for 11B ions)) approximate to (15.3/14.5) approximate to (11/10)(1/2).

引用

页码：861 / 865

页数：5

共 32 条

[1] COBALT-CATALYZED GROWTH OF CARBON NANOTUBES WITH SINGLE-ATOMIC-LAYERWALLS
BETHUNE, DS
KIANG, CH
DEVRIES, MS
GORMAN, G
SAVOY, R
VAZQUEZ, J
BEYERS, R
[J]. NATURE, 1993, 363 (6430) : 605 - 607
[2] Fullerene nanotubes can be used when transporting gamma-quanta, neutrons, ion beams and radiation from relativistic particles
Dedkov, GV
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1998, 143 (04) : 584 - 590
[3] ANISTROPIC EFFECTS IN INTERACTIONS OF ENERGETIC CHARGED PARTICLES IN A CRYSTAL LATTICE
ERGINSOY, C
[J]. PHYSICAL REVIEW LETTERS, 1965, 15 (08) : 360 - &
[4] Modified master equation approach of axial dechanneling in perfect compound crystals
Gärtner, KG
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2005, 227 (04) : 522 - 530
[5] High energy particle channeling in nanotubes
Gevorgian, LA
Ispirian, KA
Ispirian, RK
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1998, 145 (1-2) : 155 - 159
[6] Fast ion passing through straight and bent nanotubes
Greenenko, AA
Shul'ga, NF
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2003, 205 : 767 - 772
[7] Critical angles and low-energy limits to ion channeling in silicon
Hobler, G
[J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1996, 139 (01): : 21 - 85
[8] ACCELERATION OF BINARY COLLISION SIMULATIONS IN CRYSTALLINE TARGETS USING CRITICAL ANGLES FOR ION CHANNELING
HOBLER, G
SIMIONESCU, A
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1995, 102 (1-4) : 24 - 28
[9] HELICAL MICROTUBULES OF GRAPHITIC CARBON
IIJIMA, S
[J]. NATURE, 1991, 354 (6348) : 56 - 58
[10] ANALYSIS OF THE TILT AND ROTATION ANGLE DEPENDENCE OF BORON DISTRIBUTIONS IMPLANTED INTO LESS-THAN 100 GREATER-THAN SILICON
KLEIN, KM
PARK, C
TASCH, AF
SIMONTON, RB
NOVAK, S
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1991, 138 (07) : 2102 - 2107

← 1 2 3 4 →