Mechanical properties of sputtered silicon oxynitride films by nanoindentation

被引:0
作者
Zhilyaev, A. P. [1 ,2 ]
Gimazov, A. A. [2 ]
Soshnikova, E. P. [3 ]
Revesz, A. [4 ]
Langdon, T. G. [5 ,6 ,7 ]
机构
[1] CSIC, Ctr Nacl Invest Met CENIM, Plaza Murillo 2, E-28040 Madrid, Spain
[2] Russian Acad Sci, Inst Met Superplast Problems, Ufa 450001, Russia
[3] USATU, Inst Phys Adv Mat, Ufa 45000, Russia
[4] Eotvos Lorand Univ, Dept Mat Phys, H-1518 Budapest, Hungary
[5] Univ So Calif, Dept Aerosp & Mech Engn, Los Angeles, CA 90089 USA
[6] Univ So Calif, Dept Mat Sci, Los Angeles, CA 90089 USA
[7] Univ Southampton, Sch Engn Sci, Mat Res Grp, Southampton SO17 1BJ, Hants, England
来源
MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING | 2008年 / 489卷 / 1-2期
基金
美国国家科学基金会;
关键词
silicon oxynitride; sputtering; nanoindentation; creep; stress exponent; shear transformation zone;
D O I
10.1016/j.msea.2007.12.031
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Silicon oxynitride (SiON) has received a great deal of attention in micro-electro-mechanical system (MEMS) integration due to its composition dependent tunability in optical, electronic and mechanical properties. In this work, silicon oxynitride films with different oxygen and nitrogen content were deposited by RF magnetron sputtering. Energy dispersive X-ray (EDX) spectroscopy and Fourier-transform infrared (FT-IR) spectroscopy were employed to characterize the SiON films with respect to stoichiometric composition and atomic bonding structure. Time-dependent plastic deformation (creep) of SiON films were investigated by depth-sensing nanoindentation at room temperature. Young's modulus and indentation-hardness were found correlated with the nitrogen/oxygen ratio in SiON films. Results from nanoindentation creep indicated that plastic flow was less homogenous with increasing nitrogen content in film composition. Correspondingly, a deformation mechanism based on atomic bonding structure and shear transformation zone (STZ) plasticity theory was proposed to interpret creep behaviors of sputtered SiON films. (C) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码:207 / 212
页数:6
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