Tuning 2D magnetism in Fe3+XGeTe2 films by element doping

被引：14

作者：

Liu, Shanshan ^{[1
,2
,3
]}

Li, Zihan ^{[1
,2
,3
]}

Yang, Ke ^{[4
,5
]}

Zhang, Enze ^{[1
,2
,3
]}

Narayan, Awadhesh ^{[6
]}

Zhang, Xiaoqian ^{[7
]}

Zhu, Jiayi ^{[8
]}

Liu, Wenqing ^{[9
]}

Liao, Zhiming ^{[10
,11
]}

Kudo, Masaki ^{[12
]}

Toriyama, Takaaki ^{[12
]}

Yang, Yunkun ^{[1
,2
,3
]}

Li, Qiang ^{[1
,2
,3
]}

Ai, Linfeng ^{[1
,2
,3
]}

Huang, Ce ^{[1
,2
,3
]}

Sun, Jiabao ^{[9
]}

Guo, Xiaojiao ^{[13
]}

Bao, Wenzhong ^{[13
]}

Deng, Qingsong ^{[11
]}

Chen, Yanhui ^{[11
]}

Yin, Lifeng ^{[1
,2
,3
,14
]}

Shen, Jian ^{[1
,2
,3
,14
]}

Han, Xiaodong ^{[11
]}

Matsumura, Syo ^{[12
,15
]}

Zou, Jin ^{[10
,16
]}

Xu, Yongbing ^{[7
]}

Xu, Xiaodong ^{[8
]}

Wu, Hua ^{[1
,2
,5
,14
]}

Xiu, Faxian ^{[1
,2
,3
,14
,17
]}

机构：

[1] Fudan Univ, State Key Lab Sace Phys, Shanghai 200433, Peoples R China

[2] Fudan Univ, Dept Phys, Shanghai 200433, Peoples R China

[3] Fudan Univ, Inst Nanoelect Devices & Quantum Comp, Shanghai 200433, Peoples R China

[4] Univ Shanghai Sci & Technol, Coll Sci, Shanghai 200093, Peoples R China

[5] Fudan Univ, Lab Computat Phys Sci MOE, Shanghai 200433, Peoples R China

[6] Indian Inst Sci, Solid State & Struct Chem Unit, Bangalore 560012, Karnataka, India

[7] Nanjing Univ, Sch Elect Sci & Engn, Nanjing 10093, Peoples R China

[8] Univ Washington, Dept Phys, Seattle, WA 98195 USA

[9] Royal Holloway Univ London, Dept Elect Engn, Egham TW20 0EX, Surrey, England

[10] Univ Queensland, Mat Engn, Brisbane, Qld 4072, Australia

[11] Beijing Univ Technol, Berjing Key Lab Microstruct & Property Adv Mat, Inst Microstruct & Property Adv Mat, Beijing 100124, Peoples R China

[12] Kyushu Univ, Ultramicroscopy Res Ctr, Fukuoka 8130395, Japan

[13] Fudan Univ, State Lab ASIC & Syst, Sch Microelect, Shanghai 200433, Peoples R China

[14] Collaborat Innovat Ctr Adv Microstruct, Nanjing 210093, Peoples R China

[15] Kyushu Univ, Dept Appl Quantum Phys & Nucl Engn, Fukuoka 8190395, Japan

[16] Univ Queensland, Ctr Microscopy & Microanal, Brisbane, Qld 4072, Australia

[17] Shanghai Res Ctr Quantum Sci, Shanghai 201315, Peoples R China

来源：

NATIONAL SCIENCE REVIEW | 2022年 / 9卷 / 06期

基金：

中国国家自然科学基金; 英国工程与自然科学研究理事会; 中国博士后科学基金; 澳大利亚研究理事会; 北京市自然科学基金;

关键词：

2D ferromagnetic material; Fe3+XGeTe2 film; element doping; above room temperature; TC tunability; TRANSITION; FERROMAGNETISM; TEMPERATURE; FE3GETE2; CRYSTAL; FE;

D O I：

10.1093/nsr/nwab117

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

Two-dimensional (2D) ferromagnetic materials have been discovered with tunable magnetism and orbital-driven nodal-line features. Controlling the 2D magnetism in exfoliated nanoflakes via electric/magnetic fields enables a boosted Curie temperature (T-C) or phase transitions. One of the challenges, however, is the realization of high T-C 2D magnets that are tunable, robust and suitable for large scale fabrication. Here, we report molecular-beam epitaxy growth of wafer-scale Fe3+XGeTe2 films with T-C above room temperature. By controlling the Fe composition in Fe3+XGeTe2, a continuously modulated T-C in a broad range of 185-320 K has been achieved. This widely tunable T-C is attributed to the doped interlayer Fe that provides a 40% enhancement around the optimal composition X = 2. We further fabricated magnetic tunneling junction device arrays that exhibit clear tunneling signals. Our results show an effective and reliable approach, i.e. element doping, to producing robust and tunable ferromagnetism beyond room temperature in a large-scale 2D Fe3+XGeTe2 fashion. We report the tunable 2D ferromagnetism above-room-temperature in wafer-scale Fe3+XGeTe2 films and demonstrate magnetic tunneling junction arrays using Fe3+XGeTe2 films.

引用

页数：8

共 54 条

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