Structural and optical changes induced by incorporation of antimony into InAs/GaAs(001) quantum dots

被引：14

作者：

Taboada, A. G. ^{[1
]}

Sanchez, A. M. ^{[2
]}

Beltran, A. M. ^{[3
,4
]}

Bozkurt, M. ^{[5
]}

Alonso-Alvarez, D. ^{[1
]}

Alen, B. ^{[1
]}

Rivera, A. ^{[1
]}

Ripalda, J. M. ^{[1
]}

Llorens, J. M. ^{[1
]}

Martin-Sanchez, J. ^{[1
]}

Gonzalez, Y. ^{[1
]}

Ulloa, J. M. ^{[5
]}

Garcia, J. M. ^{[1
,6
]}

Molina, S. I. ^{[3
,4
]}

Koenraad, P. M. ^{[5
]}

机构：

[1] CSIC, CNM, Inst Microelect Madrid, PTM, Madrid 28760, Spain

[2] Univ Warwick, Dept Phys, Coventry CV4 7AL, W Midlands, England

[3] Univ Cadiz, Fac Ciencias, Dept Ciencia Mat, Cadiz 11510, Spain

[4] Univ Cadiz, Fac Ciencias, IM & QI, Cadiz 11510, Spain

[5] Eindhoven Univ Technol, Dept Appl Phys, COBRA Interuniv Res Inst, NL-5600 MB Eindhoven, Netherlands

[6] Columbia Univ, Dept Phys, New York, NY 10027 USA

来源：

PHYSICAL REVIEW B | 2010年 / 82卷 / 23期

关键词：

WAVELENGTH LIGHT-EMISSION; STRAIN RELAXATION; SURFACE STRESS; INAS; GAASSB; GROWTH; LASERS;

D O I：

10.1103/PhysRevB.82.235316

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present experimental evidence of Sb incorporation inside InAs/GaAs (001) quantum dots exposed to an antimony flux immediately before capping with GaAs. The Sb composition profile inside the nanostructures as measured by cross-sectional scanning tunneling and electron transmission microscopies show two differentiated regions within the quantum dots, with an Sb rich alloy at the tip of the quantum dots. Atomic force microscopy and transmission electron microscopy micrographs show increased quantum-dot height with Sb flux exposure. The evolution of the reflection high-energy electron-diffraction pattern suggests that the increased height is due to changes in the quantum-dot capping process related to the presence of segregated Sb atoms. These structural and compositional changes result in a shift of the room-temperature photoluminescence emission from 1.26 to 1.36 mu m accompanied by an order of magnitude increase in the room-temperature quantum-dot luminescence intensity.

引用

页数：9

共 50 条

[1] Structural Changes Caused by Quenching of InAs/GaAs(001) Quantum Dots
Takahasi, Masamitu
Fujikawa, Seiji
JAPANESE JOURNAL OF APPLIED PHYSICS, 2011, 50 (04)
[2] On the location of InAs quantum dots on GaAs(001)
Xu, MC
Temko, Y
Suzuki, T
Jacobi, K
SURFACE SCIENCE, 2005, 589 (1-3) : 91 - 97
[3] Annealing effects on faceting of InAs/GaAs(001) quantum dots
Placidi, E.
Della Pia, A.
Arciprete, F.
APPLIED PHYSICS LETTERS, 2009, 94 (02)
[4] Anisotropic cation diffusion in the GaAs capping of InAs/GaAs(001) quantum dots
Tisbi, E.
Latini, V.
Patella, F.
Placidi, E.
Arciprete, F.
JOURNAL OF APPLIED PHYSICS, 2016, 120 (23)
[5] InAs Quantum Dots on Nanopatterned GaAs (001) Surface: The Growth, Optical Properties, and Device Implementation
Wong, Ping-Show
Liang, Baolai
Huffaker, Diana L.
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2010, 10 (03) : 1537 - 1550
[6] Structural and optical properties of buried InAs/GaAs quantum dots on GaAsSb buffer layer
Wu, Y. H.
Chang, Li
Lin, P. Y.
Chiang, C. H.
Chen, J. F.
Chi, T. W.
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2009, 42 (18)
[7] Structural and optical properties of InAs/AlAsSb quantum dots with GaAs(Sb) cladding layers
Simmonds, Paul J.
Laghumavarapu, Ramesh Babu
Sun, Meng
Lin, Andrew
Reyner, Charles J.
Liang, Baolai
Huffaker, Diana L.
APPLIED PHYSICS LETTERS, 2012, 100 (24)
[8] Strain-engineering of GaInAsSb overgrown layers and its effects on the optical properties of InAs/GaAs quantum dots
Salhi, A.
Alshaibani, S.
Alaskar, Y.
Albrithen, H.
Albedri, A.
Alyamani, A.
OPTICAL MATERIALS, 2018, 79 : 200 - 205
[9] Deep levels induced by InAs/GaAs quantum dots
Kaniewska, M.
Engström, O.
Barcz, A.
Pacholak-Cybulska, M.
MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS, 2006, 26 (5-7): : 871 - 875
[10] Reversing the shape transition of InAs/GaAs (001) quantum dots by etching-induced lateral In segregation
Lutz, T.
Suzuki, T.
Costantini, G.
Wang, L.
Kiravittaya, S.
Rastelli, A.
Schmidt, O. G.
Kern, K.
PHYSICAL REVIEW B, 2010, 81 (20):

← 1 2 3 4 5 →