Recent advances of defect-induced spin and valley polarized states in graphene

被引:4
作者
Zhang, Yu [1 ,2 ]
Jia, Liangguang [1 ]
Chen, Yaoyao [1 ]
He, Lin [3 ]
Wang, Yeliang [1 ]
机构
[1] Beijing Inst Technol, Sch Integrated Circuits & Elect, MIIT Key Lab Low Dimens Quantum Struct & Devices, Beijing 100081, Peoples R China
[2] Beijing Inst Technol, Adv Res Inst Multidisciplinary Sci, Beijing 100081, Peoples R China
[3] Beijing Normal Univ, Ctr Adv Quantum Studies, Dept Phys, Beijing 100875, Peoples R China
基金
中国国家自然科学基金; 北京市自然科学基金; 中国博士后科学基金;
关键词
graphene; atomic-scale defect; broken symmetry; spin and valley polarized states; ELECTRONIC-PROPERTIES; BERRYS PHASE;
D O I
10.1088/1674-1056/ac70c4
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Electrons in graphene have fourfold spin and valley degeneracies owing to the unique bipartite honeycomb lattice and an extremely weak spin-orbit coupling, which can support a series of broken symmetry states. Atomic-scale defects in graphene are expected to lift these degenerate degrees of freedom at the nanoscale, and hence, lead to rich quantum states, highlighting promising directions for spintronics and valleytronics. In this article, we mainly review the recent scanning tunneling microscopy (STM) advances on the spin and/or valley polarized states induced by an individual atomic-scale defect in graphene, including a single-carbon vacancy, a nitrogen-atom dopant, and a hydrogen-atom chemisorption. Lastly, we give a perspective in this field.
引用
收藏
页数:9
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