Electrical Activity of Extended Defects in Relaxed InxGa1-xAs Hetero-Epitaxial Layers

被引：3

作者：

Claeys, C. ^{[1
]}

Hsu, P-C ^{[2
,3
]}

Mols, Y. ^{[2
]}

Han, H. ^{[2
]}

Bender, H. ^{[2
]}

Seidel, F. ^{[2
]}

Carolan, P. ^{[2
]}

Merckling, C. ^{[2
]}

Alian, A. ^{[2
]}

Waldron, N. ^{[2
]}

Eneman, G. ^{[2
]}

Collaert, N. ^{[2
]}

Heyns, M. ^{[2
,3
]}

Simoen, E. ^{[2
,4
]}

机构：

[1] Katholieke Univ Leuven, Dept Elect Engn, B-3001 Leuven, Belgium

[2] IMEC, B-3001 Leuven, Belgium

[3] Katholieke Univ Leuven, Dept Mat Engn, B-001 Leuven, Belgium

[4] Univ Ghent, Dept Solid State Sci, B-9000 Ghent, Belgium

来源：

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | 2020年 / 9卷 / 03期

关键词：

GAAS SOLAR-CELLS; DEEP LEVELS; MISFIT DISLOCATIONS; ANTIPHASE DOMAINS; EFFICIENCY; REDUCTION; LIFETIMES; SILICON; STATES; GENERATION;

D O I：

10.1149/2162-8777/ab74c7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The electrical activity of extended defects in III-V materials, combining different analysis methods based on lifetime extraction from diode current-voltage characteristics, time resolved photoluminescence (TRPL) and deep level studies using Deep Level Transient Spectroscopy (DLTS) is reviewed. To that purpose p(+)n junction diodes have been fabricated in In0.53Ga0.47As hetero-epitaxial layers on semi-insulating InP or GaAs substrates. By depositing a strained buffer layer, the Extended Defect Density (EDD) can be varied over several decades, enabling a systematic study of their electrical impact in the same range. The defect densities are determined by High-Resolution X-ray Diffraction (HR-XRD), DLTS and Electron Channeling Contrast (ECCI) techniques. The generation and recombination (GR) lifetimes of the In0.53Ga0.47As layers become dominated by the EDs for densities above about 3 x 10(7) cm(-2), whereby the dominant GR level moves closer to the mid gap position. This is supported by DLTS investigations, showing the occurrence of specific electron traps for defective epi layers, which exhibit a capture behavior that is typical for extended defects. (C) 2020 The Electrochemical Society ("ECS"). Published on behalf of ECS by IOP Publishing Limited.

引用

页数：8