Edge and vertical surface emitting lasers around 2.0-2.5 μm and their applications

被引:23
作者
Rouillard, Y [1 ]
Genty, F [1 ]
Pérona, A [1 ]
Vicet, A [1 ]
Yarekha, DA [1 ]
Boissier, G [1 ]
Grech, P [1 ]
Baranov, AN [1 ]
Alibert, C [1 ]
机构
[1] Univ Montpellier 2, Ctr Elect & Microoptoelect Montpellier, CNRS, UMR 5507, F-34095 Montpellier 05, France
来源
PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES | 2001年 / 359卷 / 1780期
关键词
semiconductor laser; GaInAsSb; mid-infrared; tunable diode laser absorption spectroscopy; methane;
D O I
10.1098/rsta.2000.0744
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
One of the main concerns in environmental issues is the accumulation of pollutant gases in the atmosphere. This gives rise to a need for convenient ways of detecting these gases. In this paper we review some fundamentals of a technique called 'tunable diode laser absorption spectroscopy', which is suitable for making a portable gas analyser. We focus on the 2.2-2.4 mum range which corresponds both to a transparency window in the atmosphere and to high absorption bands of the main pollutant gases. We present two GaInAsSb/AlGaAsSb laser diodes which meet well the requirements for a portable gas analyser: a laser diode emitting at 2.38 mum exhibiting a monomode emission (side-mode suppression ratio 30 dB) and a laser diode emitting at 2.30 mum able to operate continuous wave up to 140 degreesC. Thanks to these diodes we designed a set-up for gas detection using the tunable diode laser absorption spectroscopy technique. We have reached a sensitivity as good as 1 ppm for CH4 at atmospheric pressure. Finally, we present a promising technique called 'intra cavity laser absorption spectroscopy' making use of a new device, the 'vertical external cavity surface emitting laser', which may allow us to increase sensitivity by a factor of 10(5).
引用
收藏
页码:581 / 597
页数:17
相关论文
共 15 条
[1]  
AMANN MC, 1998, TUNABLE LASER DIODES, P67
[2]   Analysis of temperature dependence of the threshold current in 2.3-2.6 μm InGaAsSb/AlGaAsSb quantum-well lasers [J].
Andreev, AD ;
Donetsky, DV .
APPLIED PHYSICS LETTERS, 1999, 74 (19) :2743-2745
[3]   Sb-based monolithic VCSEL operating near 2.2μm at room temperature [J].
Baranov, AN ;
Rouillard, Y ;
Boissier, G ;
Grech, P ;
Gaillard, S ;
Alibert, C .
ELECTRONICS LETTERS, 1998, 34 (03) :281-282
[4]   MODE-HOPPING NOISE IN INDEX-GUIDED SEMICONDUCTOR-LASERS AND ITS REDUCTION BY SATURABLE ABSORBERS [J].
CHINONE, N ;
KURODA, T ;
OHTOSHI, T ;
TAKAHASHI, T ;
KAJIMURA, T .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1985, 21 (08) :1264-1270
[5]   DOUBLE-HETEROSTRUCTURE DIODE-LASERS EMITTING AT 3-MU-M WITH A METASTABLE GAINASSB ACTIVE LAYER AND ALGAASSB CLADDING LAYERS [J].
CHOI, HK ;
EGLASH, SJ ;
TURNER, GW .
APPLIED PHYSICS LETTERS, 1994, 64 (19) :2474-2476
[6]   2.3-2.7-μm room temperature CW operation of InGaAsSb-AlGaAsSb broad waveguide SCH-QW diode lasers [J].
Garbuzov, DZ ;
Lee, H ;
Khalfin, V ;
Martinelli, R ;
Connolly, JC ;
Belenky, GL .
IEEE PHOTONICS TECHNOLOGY LETTERS, 1999, 11 (07) :794-796
[7]   High-sensitivity intracavity laser absorption spectroscopy with vertical-external-cavity surface-emitting semiconductor lasers [J].
Garnache, A ;
Kachanov, AA ;
Stoeckel, F ;
Planel, R .
OPTICS LETTERS, 1999, 24 (12) :826-828
[8]   THE TEMPERATURE AND PRESSURE-DEPENDENCE OF REFRACTIVE-INDEXES OF SOME III-V AND II-VI BINARY SEMICONDUCTORS [J].
GHOSH, DK ;
SAMANTA, LK ;
BHAR, GC .
INFRARED PHYSICS, 1986, 26 (02) :111-114
[9]  
HOLLAND AL, 1992, NIDCD MONOGRAPH, V2, P147
[10]  
KUZNETZOV AI, 1992, SPIE, V1724, P128