Mixed phases of GaOOH/β-Ga2O3 and α-Ga2O3/β-Ga2O3 prepared by high energy ball milling as active photocatalysts for CO2 reduction with water

被引:7
|
作者
Aoki, Tomomi [1 ]
Yamamoto, Muneaki [2 ]
Tanabe, Tetsuo [2 ]
Yoshida, Tomoko [2 ]
机构
[1] Osaka City Univ, Grad Sch Engn, Appl Chem & Bioengn, Osaka 5588585, Japan
[2] Osaka City Univ, Res Ctr Artificial Photosynth, Osaka 5588585, Japan
关键词
GALLIUM OXIDE; GA2O3; CONVERSION; PARTICLES; EVOLUTION; METHANOL;
D O I
10.1039/d1nj05245d
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The photocatalytic activity of mixed phases of GaOOH/beta-Ga2O3 and alpha-Ga2O3/beta-Ga2O3 for CO2 reduction with water is investigated for the first time. GaOOH/beta-Ga2O3 is synthesized by high energy ball milling of beta-Ga2O3 in water, and alpha-Ga2O3/beta-Ga2O3 are prepared by the calcination of GaOOH/beta-Ga2O3 at 773 K. Both show higher activity for both CO2 reduction and the accompanying H-2 evolution than the original material of beta-Ga2O3. This is the first observation that the mixed phase of GaOOH/beta-Ga2O3 has high photocatalytic activity. The H-2 production rate is correlated to the specific surface area irrespective of the GaOOH/beta-Ga2O3 and alpha-Ga2O3/beta-Ga2O3 samples. The CO production rate for the mixed phase of alpha-Ga2O3/beta-Ga2O3 is high, agreeing with the previous observation that the mixed phases or phase boundaries enhance the photocatalytic activity, and the CO production rate increases with the abundance rate of the alpha-Ga2O3 phase. Although the selectivity of the CO production remains low, it could be enhanced if an Ag cocatalyst was used. As an alternative mechanism of H-2 production (H-2 evolution) over the samples of GaOOH/beta-Ga2O3 and alpha-Ga2O3/beta-Ga2O3, a redox type reaction mechanism is proposed, in which the H-2 evolution proceeds with the reduction of GaOOH to alpha-Ga2O3 emitting H-2 and O-2 by UV illumination, while alpha-Ga2O3 returned to GaOOH in water without illumination. Although some of the H-2 thus evolved would cause CO2 reduction, CO2 reduction to CO requires specific active sites on the alpha-Ga2O3 surface.
引用
收藏
页码:3207 / 3213
页数:7
相关论文
共 50 条
  • [41] Selective catalytic reduction of NO by hydrocarbons on Ga2O3/Al2O3 catalysts
    Shimizu, K
    Satsuma, A
    Hattori, T
    APPLIED CATALYSIS B-ENVIRONMENTAL, 1998, 16 (04) : 319 - 326
  • [42] High-pressure behavior of β-Ga2O3 nanocrystals
    Wang, H.
    He, Y.
    Chen, W.
    Zeng, Y. W.
    Stahl, K.
    Kikegawa, T.
    Jiang, J. Z.
    JOURNAL OF APPLIED PHYSICS, 2010, 107 (03)
  • [43] Effects of Al2O3 and MgAl2O4 Support on Photocatalytic Activity of Ga2O3 in CO2 Reduction with Water
    Ichikawa, Kyoshiro
    Aoki, Tomomi
    Akatsuka, Masato
    Yamamoto, Muneaki
    Tanabe, Tetsuo
    Yoshida, Tomoko
    CATALYSIS LETTERS, 2024, 154 (05) : 2008 - 2022
  • [44] Growth and characterization of Ga2O3 nanoribbons and nanosheets
    Kim, Hyoun Woo
    FUNCTIONAL MATERIALS AND DEVICES, 2006, 517 : 53 - 56
  • [45] Lateral β-Ga2O3 field effect transistors
    Chabak K.D.
    Leedy K.D.
    Green A.J.
    Mou S.
    Neal A.T.
    Asel T.
    Heller E.R.
    Hendricks N.S.
    Liddy K.
    Crespo A.
    Miller N.C.
    Lindquist M.T.
    Moser N.A.
    Fitch R.C.
    Walker D.E.
    Dorsey D.L.
    Jessen G.H.
    Semiconductor Science and Technology, 2020, 35 (01)
  • [46] Ga2O3 films formed by electrochemical oxidation
    Kalygina, V. M.
    Zarubin, A. N.
    Nayden, Ye P.
    Novikov, V. A.
    Petrova, Y. S.
    Tolbanov, O. P.
    Tyazhev, A. V.
    Yaskevich, T. M.
    SEMICONDUCTORS, 2011, 45 (08) : 1097 - 1102
  • [47] Synthesis of Ga2O3 powders by precipitation method
    Jung, Jong-Yeol
    Kim, Sang-Hun
    Kang, Eun-Tae
    Han, Kyu-Sung
    Kim, Jin-Ho
    Hwang, Kwang-Teak
    Cho, Woo-Seok
    JOURNAL OF THE KOREAN CRYSTAL GROWTH AND CRYSTAL TECHNOLOGY, 2014, 24 (01): : 8 - 14
  • [48] Recent progress in Ga2O3 power devices
    Higashiwaki, Masataka
    Sasaki, Kohei
    Murakami, Hisashi
    Kumagai, Yoshinao
    Koukitu, Akinori
    Kuramata, Akito
    Masui, Takekazu
    Yamakoshi, Shigenobu
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2016, 31 (03)
  • [49] Influence of Polymorphism on the Electronic Structure of Ga2O3
    Swallow, Jack E. N.
    Vorwerk, Christian
    Mazzolini, Piero
    Vogt, Patrick
    Bierwagen, Oliver
    Karg, Alexander
    Eickhoff, Martin
    Schoermann, Joerg
    Wagner, Markus R.
    Roberts, Joseph W.
    Chalker, Paul R.
    Smiles, Matthew J.
    Murgatroyd, Philip
    Razek, Sara A.
    Lebens-Higgins, Zachary W.
    Piper, Louis F. J.
    Jones, Leanne A. H.
    Thakur, Pardeep K.
    Lee, Tien-Lin
    Varley, Joel B.
    Furthmueller, Juergen
    Draxl, Claudia
    Veal, Tim D.
    Regoutz, Anna
    CHEMISTRY OF MATERIALS, 2020, 32 (19) : 8460 - 8470
  • [50] LOW TEMPERATURE SCINTILLATION PROPERTIES OF Ga2O3
    Mykhaylyk, V. B.
    Kraus, H.
    Kapustianyk, V
    Rudko, M.
    Kolomiets, V
    JOURNAL OF PHYSICAL STUDIES, 2020, 24 (02):