Hexagonal boron phosphide and boron arsenide van der Waals heterostructure as high-efficiency solar cell

被引:4
作者
Li, Yi [1 ]
Wei, Dong [2 ]
Guo, Gaofu [2 ]
Zhao, Gao [1 ]
Tang, Yanan [1 ]
Dai, Xianqi [2 ]
机构
[1] Zhengzhou Normal Univ, Sch Phys & Elect Engn, Zhengzhou 450044, Peoples R China
[2] Henan Normal Univ, Sch Phys, Xinxiang 453007, Henan, Peoples R China
基金
中国国家自然科学基金;
关键词
h-BP; h-BAs; two-dimensional heterostructure; solar cell; HIGH THERMAL-CONDUCTIVITY; MONOLAYER;
D O I
10.1088/1674-1056/ac6b2a
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The rapid development of two-dimensional (2D) materials offers new opportunities for 2D ultra-thin excitonic solar cells (XSCs). The construction of van der Waals heterostructure (vdWH) is a recognised and effective method of integrating the properties of single-layer 2D materials, creating particularly superior performance. Here, the prospects of h-BP/h-BAs vdW heterostructures in 2D excitonic solar cells are assessed. We systematically investigate the electronic properties and optical properties of heterogeneous structures by using the density functional theory (DFT) and first-principles calculations. The results indicate that the heterogeneous structure has good optoelectronic properties, such as a suitable direct bandgap and excellent optical absorption properties. The calculation of the phonon spectrum also confirms the well-defined kinetic stability of the heterstructure. We design the heterogeneous structure as a model for solar cells, and calculate its solar cell power conversion efficiency which reaches up to 16.51% and is higher than the highest efficiency reported in organic solar cells (11.7%). Our work illustrates the potential of h-BP/h-BAs heterostructure as a candidate for high-efficiency 2D excitonic solar cells.
引用
收藏
页数:8
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共 55 条
[1]   PHON: A program to calculate phonons using the small displacement method [J].
Alfe, Dario .
COMPUTER PHYSICS COMMUNICATIONS, 2009, 180 (12) :2622-2633
[2]   Electron-Mediated Nuclear-Spin Interactions between Distant Nitrogen-Vacancy Centers [J].
Bermudez, A. ;
Jelezko, F. ;
Plenio, M. B. ;
Retzker, A. .
PHYSICAL REVIEW LETTERS, 2011, 107 (15)
[3]   Semiconducting Monolayer Materials as a Tunable Platform for Excitonic Solar Cells [J].
Bernardi, Marco ;
Palummo, Maurizia ;
Grossman, Jeffrey C. .
ACS NANO, 2012, 6 (11) :10082-10089
[4]   PROJECTOR AUGMENTED-WAVE METHOD [J].
BLOCHL, PE .
PHYSICAL REVIEW B, 1994, 50 (24) :17953-17979
[5]   High-throughput screening of single metal atom anchored on N-doped boron phosphide for N2 reduction [J].
Chen, Yibo ;
Zhang, Xinyu ;
Qin, Jiaqian ;
Liu, Riping .
NANOSCALE, 2021, 13 (31) :13437-13450
[6]   Stretchable spin valve with strain-engineered wrinkles grown on elastomeric polydimethylsiloxane [J].
Cheng, Wenjuan ;
Zhou, Zheng ;
Pan, Minjie ;
Yang, Huali ;
Xie, Yali ;
Wang, Baomin ;
Zhan, Qingfeng ;
Li, Run-Wei .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2019, 52 (09)
[7]   Semiconductor-metal transition in multi-layer sandwiched BAs/BP heterostructures induced by BP intercalation [J].
Dai, Xinyue ;
Zhang, Xingfan ;
Li, Hui .
APPLIED SURFACE SCIENCE, 2020, 507
[8]   Photoluminescence from Chemically Exfoliated MoS2 [J].
Eda, Goki ;
Yamaguchi, Hisato ;
Voiry, Damien ;
Fujita, Takeshi ;
Chen, Mingwei ;
Chhowalla, Manish .
NANO LETTERS, 2011, 11 (12) :5111-5116
[9]   Vertical van der Waals Heterostructure of Single Layer InSe and SiGe [J].
Eren, I. ;
Ozen, S. ;
Sozen, Y. ;
Yagmurcukardes, M. ;
Sahin, H. .
JOURNAL OF PHYSICAL CHEMISTRY C, 2019, 123 (51) :31232-31237
[10]   Experiments confirm predicted high thermal conductivity of boron arsenide [J].
Fellet, Melissae .
MRS BULLETIN, 2018, 43 (10) :727-727