Sidewall-Implanted Trench Termination for 4H-SiC Devices With High Breakdown Voltage and Low Leakage Current

被引：9

作者：

Liu, Li ^{[1
]}

Wang, Jue ^{[2
]}

Wang, Hengyu ^{[1
]}

Ren, Na ^{[1
]}

Guo, Qing ^{[1
]}

Sheng, Kuang ^{[1
]}

机构：

[1] Zhejiang Univ, Coll Elect Engn, Hangzhou 310027, Peoples R China

[2] Zhejiang Univ City Coll, Sch Informat & Elect Engn, Hangzhou 310015, Peoples R China

来源：

IEEE ELECTRON DEVICE LETTERS | 2022年 / 43卷 / 01期

基金：

中国博士后科学基金; 中国国家自然科学基金;

关键词：

SiC; edge termination; sidewall implantation; electric field crowding; field plate; oxidation; DEEP-TRENCH; DESIGN;

D O I：

10.1109/LED.2021.3128613

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, a sidewall-implanted trench termination for SiC devices is proposed and experimentally demonstrated. With the p-type sidewall region implemented by tilted ion implantation, the electric field crowding at the edge of the main junction can be alleviated. Compared with the conventional trench termination, devices with the fabricated sidewall-implanted trench termination exhibits a higher breakdown voltage (BV) exceeding 1800V, as well as lower leakage current. Moreover, the minimum trench width for over 1800V blocking is significantly reduced from 14 mu m to 5 mu m. In addition, the sidewall-implanted trench termination shows stronger robustness as the dominant current path is relocated from the trench sidewall to the whole active region.

引用

页码：104 / 107

页数：4

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