Breaking the subthreshold slope limit in MOSFETs

被引：6

作者：

Cristoloveanu, Sorin ^{[1
]}

Ghibaudo, Gerard

机构：

[1] Univ Grenoble Alpes, IMEP LAHC, Grenoble INP, 3 Parvis L Neel, F-38016 Grenoble, France

来源：

SOLID-STATE ELECTRONICS | 2022年 / 198卷

关键词：

Boltzmann limit; Potential fluctuations; Mobility; MOSFET; Subthreshold slope; Swing; Low temperature; 3; CARRIER MOBILITIES; MAGNETORESISTANCE; MODEL;

D O I：

10.1016/j.sse.2022.108465

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The Boltzmann limit of the subthreshold swing 2.3kT/q in MOSFETs is a widely-disseminated myth originated from a common amalgam between drain current and mobile charge. We show that the carrier mobility can substantially increase from weak to strong inversion due to the screening of potential fluctuations and Coulomb scattering. The mobility rise enables the current to increase faster than the inversion charge, thus breaking the apparent theoretical limit.

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页数：5

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