Charge transport in SiCN/Si heterostructures

被引：2
|
作者：
Sukach, A., V [1 ]
Tetyorkin, V. V. [1 ]
Tkachuk, A., I [2 ]
Kozak, A. O. [3 ,4 ]
Porada, O. K. [3 ]
Ivashchenko, V. I. [3 ]
机构：
[1] V Lashkaryov Inst Semicond Phys NAS Ukraine, 41 Nauki Pr, UA-03028 Kiev, Ukraine
[2] V Vynnychenko Cent Ukrainian State Pedag Univ, 1 Shevchenka Str, UA-25006 Kropyvnytskyi, Ukraine
[3] Inst Problems Mat Sci NAS Ukraine, 3 Krzhyzhanovsky Str, UA-03142 Kiev, Ukraine
[4] Ctr Adv Mat Applicat SAS, Dubravska Cesta 5807-9, Bratislava 84511, Slovakia
来源：
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2022年 / 143卷
关键词：
Amorphous SiCN films; Traps; Band states; Space-charge limited current; Vacuum annealing; MICROWAVE-ABSORPTION PROPERTIES; LIMITED CURRENTS; CARBONITRIDE CERAMICS; H FILMS; SILICON; TEMPERATURE; SOLIDS; SINGLE;
D O I：
10.1016/j.mssp.2022.106515
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The steady-state space-charge limited (SCL) current was investigated in amorphous silicon carbonitride (a-SiCN) films deposited on single crystal silicon substrates of p-type conductivity by plasma-enhanced chemical vapor deposition (PECVD) technique. The influence of the deposition time and thermal annealing on the mechanism of the SCL current is studied. It is shown that the SCL current can be limited by shallow or deep traps, depending on the preparation condition. Experimental evidences are obtained that the traps in the films under study are associated with dangling bond defects, presumably due to the decomposition of Si-H bonds. Band and trap parameters (mobility of electrons, density and energy of trap states) are estimated from the SCL current measurements.
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页数：7
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