Self-assembly of GaAs holed nanostructures by droplet epitaxy

被引：53

作者：

Wang, ZMM ^{[1
]}

Holmes, K ^{[1
]}

Shultz, JL ^{[1
]}

Salamo, GJ ^{[1
]}

机构：

[1] Univ Arkansas, Dept Phys, Fayetteville, AR 72701 USA

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2005年 / 202卷 / 08期

关键词：

D O I：

10.1002/pssa.200510031

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report on Ga nano-droplets on GaAs(100) that are not stable under arsenic flux. Spontaneous evolution in shape leads to many interesting GaAs nanostructures. GaAs nanocrystals shaped like lighted candles and square-holed round coins are observed under different growth conditions. The underlying physics of the formation of these interesting nano-structures can be understood in terms of GaAs growth under a uniform arsenic flux and a non-uniform Ga supply from the Ga nano-droplets. These novel shaped GaAs nanostructures, in an AlGaAs matrix, offer promising applications in optoelectronics. (c) 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

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页码：R85 / R87

页数：3

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