High-temperature thermoelectric properties of Cu2In4Te7

被引:10
作者
Plirdpring, Theerayuth [1 ,2 ]
Kurosaki, Ken [1 ]
Kosuga, Atsuko [3 ]
Ishimaru, Manabu [4 ]
Ohishi, Yuji [1 ]
Muta, Hiroaki [1 ]
Yamanaka, Shinsuke [1 ,5 ]
机构
[1] Osaka Univ, Grad Sch Engn, Suita, Osaka 5650871, Japan
[2] Rajamangala Univ Technol Suvarnabhumi, Thermoelect & Nanotechnol Res Ctr, Fac Sci & Technol, Huntra Phranakhon Si Ayu 13000, Thailand
[3] Osaka Prefecture Univ, Nanosci & Nanotechnol Res Ctr, Res Org 21st Century, Naka Ku, Sakai, Osaka 5998570, Japan
[4] Osaka Univ, Inst Sci & Ind Res, Ibaraki, Osaka 5670047, Japan
[5] Univ Fukui, Res Inst Nucl Engn, Fukui 9108507, Japan
来源
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | 2012年 / 6卷 / 04期
关键词
thermoelectrics; Cu2In4Te7; vacancies; thermal conductivity; electrical resistivity; Seebeck coefficient; SEMICONDUCTING PROPERTIES; SINGLE-CRYSTALS;
D O I
10.1002/pssr.201206058
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Cu2Ga4Te7 has recently been reported to have a relatively high thermoelectric (TE) figure of merit (ZT). However, the TE properties of Cu2In4Te7, which has the same defect zinc-blende structure as Cu2Ga4Te7, have been hardly investigated. Here, we demonstrate that Cu2In4Te7 has relatively high ZT values that are similar to those of Cu2Ga4Te7. High-density polycrystalline bulk samples of Cu2In4Te7 were prepared and their electrical resistivity (?), Seebeck coefficient (S), and thermal conductivity (?) were measured. Cu2In4Te7 has a maximum ZT of 0.3 at 700 K, with ?, S, and ? values of 62.1 x 105 O m, 394 mu V K1, and 0.61 W m1 K1, respectively. (C)2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
引用
收藏
页码:154 / 156
页数:3
相关论文
共 12 条
[11]   THE GROWTH AND DOPING OF SINGLE-CRYSTALS OF CUINTE2 [J].
TOMLINSON, RD ;
ELLIOTT, E ;
HAWORTH, L ;
HAMPSHIRE, MJ .
JOURNAL OF CRYSTAL GROWTH, 1980, 49 (01) :115-119
[12]   Thermoelectrics and nanomaterials [J].
Tritt, Terry M. .
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2007, 1 (06) :A91-A92