Effect of thermal annealing treatments on the optical activation of Tb3+-doped amorphous SiC:H thin films (vol 49, 375104, 2016)

被引:0
作者
Guerra, J. A. [1 ,2 ]
De Zela, F. [1 ]
Tucto, K. [1 ]
Montanez, L. [1 ]
Tofflinger, J. A. [1 ]
Winnacker, A. [2 ]
Weingartner, R. [1 ]
机构
[1] Pontificia Univ Catolica Peru, Secc Fis, Dept Ciencias, Av Univ 1801, Lima 32, Peru
[2] Univ Erlangen Nurnberg, Dept Mat Sci 6, Martenstr 6, D-91058 Erlangen, Germany
关键词
concentration quenching; rare earth; SiC; thermal activation;
D O I
10.1088/0022-3727/49/40/409601
中图分类号
O59 [应用物理学];
学科分类号
摘要
The effect of the annealing temperature on the light emission intensity of Tb-doped a-SiC: H thin films was investigated for different Tb concentrations under sub-bandgap photon excitation. We present a detailed discussion of rare-earth thermal activation in order to determine the optimal Tb concentration and annealing temperature for the highest Tb-related light emission intensity. Two independent processes that enhance the emission intensity are identified and incorporated in a rate equation. These are the thermally-induced increase of luminescence centers and the inhibition of host-mediated non-radiative recombinations. Finally, the presented analysis revealed a suppression of the self-quenching effect when increasing the annealing temperature.
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页数:1
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