Diffuse x-ray reflection from multilayers with stepped interfaces

被引：34
|
作者：
Holy, V
Giannini, C
Tapfer, L
Marschner, T
Stolz, W
机构：
[1] CTR NAZL RIC & SVILUPPO MAT,PASTIS,I-72100 BRINDISI,ITALY
[2] UNIV MARBURG,WISSENSCH ZENTRUM MAT WISSENSCH,D-35032 MARBURG,GERMANY
[3] UNIV MARBURG,FACHBEREICH PHYS,D-35032 MARBURG,GERMANY
来源：
PHYSICAL REVIEW B | 1997年 / 55卷 / 15期
关键词：
D O I：
10.1103/PhysRevB.55.9960
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Diffuse x-ray reflection from a multilayer with stepped interfaces has been investigated theoretically and experimentally. The statistical description of the stepped interfaces has been based on the theory of random processes. Diffuse x-ray scattering from those interfaces has been calculated using the distorted-wave Born approximation. The theory has been used for an analysis of the intensity distributions measured on a GaAs/(GaIn)As/GaAs/Ga(PAs) strained-layer superlattice grown on a miscut substrate. From the measurements, the mean size of the interface terraces and their orientations could be determined.
引用
收藏
页码：9960 / 9968
页数：9
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