The antisite LuAl defect-related trap in Lu3Al5O12:Ce single crystal

被引：197

作者：

Nikl, M

Mihokova, E

Pejchal, J

Vedda, A

Zorenko, Y

Nejezchleb, K

机构：

[1] AS CR, Inst Phys, Prague 6, Czech Republic

[2] CNR, INFM, I-20125 Milan, Italy

[3] Univ Milan, Dipartimento Sci Mat, I-20125 Milan, Italy

[4] Ivan Franko Natl Univ Lviv, Dept Elect, Lab Optoelect Mat, UA-79017 Lvov, Ukraine

[5] CRYTUR Ltd, Turnov 51119, Czech Republic

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2005年 / 242卷 / 14期

关键词：

D O I：

10.1002/pssb.200541225

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Absorption, radioluminescence and thermoluminescence spectra were measured for a set of Lu3Al5O12:Ce samples consisting of a bulk single crystal and Liquid Phase Epitaxy-grown films prepared from the same raw materials. The triple peak structure within 120-200 K distinguished in thermoluminescence glow curves of the bulk crystals was ascribed to an electron trap arising due to the LuAl antisite defect. The depth of the trap associated with the dominant peak at 142 K was evaluated using the initial rise method. © 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：R119 / R121

页数：1