Study on As diffusion control of MBE-grown P-on- N HgCdTe

As diffusion control caused by the thermal annealing of in-situ As-doped HgCdTe grown by molecular beam epitaxy(MBE) was studied. HgCdTe with controllable As diffusion length is obtained at a lower annealing temperature,which is easy to form a PN junction profile that meets the design parameters. It provides a basis for the subsequent development of new HgCdTe FPA devices. It is found that the longitudinal distribution of As concentration of the in-situ As-doped HgCdTe changed under different Hg pressures during the thermal annealing process. And through theoretical calculations,As diffusion coefficients under different Hg pressures are obtained. Meanwhile,the dark current simulation of HgCdTe P-on-N structure with different As diffusion lengths was carried out through numerical simulation, which verified the importance of deep-advancing process for As-doped HgCdTe PN junction.