Enhanced photoresponsivity in Bi2Se3 decorated GaN nanowall network-based photodetectors

被引：12

作者：

Aggarwal, Vishnu ^{[1
,2
,3
]}

Gautam, Sudhanshu ^{[1
,2
]}

Yadav, Aditya ^{[1
,2
]}

Kumar, Rahul ^{[1
,2
]}

Pradhan, Bipul Kumar ^{[1
,2
]}

Yadav, Brajesh S. ^{[4
]}

Gupta, Govind ^{[1
,2
]}

Muthusamy, Senthil Kumar ^{[1
,2
]}

Walia, Sumeet ^{[3
]}

Kushvaha, Sunil Singh ^{[1
,2
]}

机构：

[1] CSIR Natl Phys Lab, Dr KS Krishnan Rd, New Delhi 110012, India

[2] Acad Sci & Innovat Res AcSIR, Ghaziabad 201002, India

[3] RMIT Univ, Sch Engn, Melbourne, Vic 3000, Australia

[4] Solid State Phys Lab, Lucknow Rd, Delhi 110054, India

来源：

MATERIALS RESEARCH BULLETIN | 2024年 / 171卷

关键词：

Laser-MBE; GaN nanostructures; Bi; 2; Se; 3; Hybrid metal-semiconductor-metal photode; tector; Ultraviolet; HIGH-RESPONSIVITY; RAMAN-SCATTERING; ULTRAVIOLET; HETEROJUNCTION; ULTRAFAST; SAPPHIRE;

D O I：

10.1016/j.materresbull.2023.112608

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Recently, highly responsive photodetectors which are capable of photodetection in a wide range of wavelength spectra are in great demand. To fulfil this, photodetectors formed using heterojunctions of multiple semiconducting materials gain a lot of interest as they cover a broad range of photodetection, and the built-in electric field developed at their interface helps to enhance photoresponse. Here, we have demonstrated a fascinating broadband metal-semiconductor-metal type photodetector (PD) by integrating sputtered Bi2Se3 with the laser molecular beam epitaxy (LMBE) grown GaN film and porous nanowall network on sapphire (0001) substrates. The fabricated photodetectors using a hybrid Bi2Se3/LMBE-GaN nanowall structure exhibit broadband characteristics with a high responsivity of 51.4 and 1.46 A/W when illuminating with the laser of wavelength 355 nm (UV) and 1064 nm (NIR), respectively. The enhanced UV responsivity and good response in the NIR region using Bi2Se3/GaN heterojunction nanostructures suggest futuristic application in dual-wavelength detector devices.

引用

页数：13

共 63 条

[1] Fabrication of ultra-violet photodetector on laser MBE grown epitaxial GaN nanowalls on sapphire (11-20) [J].