Highly Sensitive and Selective Defect WS2 Chemical Sensor for Detecting HCHO Toxic Gases

被引:41
作者
Cui, Zhen [1 ,2 ]
Wang, Hanxiao [1 ]
Yang, Kunqi [1 ]
Shen, Yang [1 ]
Qin, Ke [1 ]
Yuan, Pei [1 ]
Li, Enling [1 ]
机构
[1] Xian Univ Technol, Sch Sci, Xian 710054, Peoples R China
[2] Xian Univ Technol, Sch Automat & Informat Engn, Xian 710048, Peoples R China
基金
中国国家自然科学基金;
关键词
defect WS2 chemical sensors; sensitivity; selectivity; toxic gases; ADSORPTION; MONOLAYER;
D O I
10.3390/s24030762
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
The gas sensitivity of the W defect in WS2 (V-W/WS2) to five toxic gases-HCHO, CH4, CH3HO, CH3OH, and CH3CH3-has been examined in this article. These five gases were adsorbed on the V-W/WS2 surface, and the band, density of state (DOS), charge density difference (CDD), work function (W), current-voltage (I-V) characteristic, and sensitivity of adsorption systems were determined. Interestingly, for HCHO-V-W/WS2, the energy level contribution of HCHO is closer to the Fermi level, the charge transfer (B) is the largest (0.104 e), the increase in W is more obvious than other adsorption systems, the slope of the I-V characteristic changes more obviously, and the calculated sensitivity is the highest. To sum up, V-W/WS2 is more sensitive to HCHO. In conclusion, V-W/WS2 has a great deal of promise for producing HCHO chemical sensors due to its high sensitivity and selectivity for HCHO, which can aid in the precise and efficient detection of toxic gases.
引用
收藏
页数:14
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