Investigation of Electrically Active Defects in SiC Power Diodes Caused by Heavy Ion Irradiation

被引：15

作者：

Fur, N. ^{[1
]}

Belanche, Manuel ^{[1
]}

Martinella, C. ^{[1
]}

Kumar, Piyush ^{[1
]}

Bathen, Marianne E. ^{[1
]}

Grossner, U. ^{[1
]}

机构：

[1] Swiss Fed Inst Technol, Adv Power Semicond Lab APS, CH-8092 Zurich, Switzerland

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2023年 / 70卷 / 08期

基金：

瑞士国家科学基金会;

关键词：

Radiation effects; Silicon carbide; Ions; Temperature measurement; Schottky diodes; Semiconductor device measurement; Leakage currents; Deep-level transient spectroscopy (DLTS); defects; degradation; heavy ion; junction barrier Schottky (JBS); microbeam; minority carrier transient spectroscopy (MCTS); silicon carbide (SiC) power diodes; single-event effect (SEE); single-event leakage current (SELC); LEAKAGE CURRENT; DEEP LEVELS; SCHOTTKY;

D O I：

10.1109/TNS.2023.3242760

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Deep-level transient spectroscopy (DLTS) and minority carrier transient spectroscopy (MCTS) are used to investigate electrically active defects in commercial silicon carbide (SiC) Schottky power diodes after heavy-ion microbeam irradiation at different voltages. The DLTS and MCTS spectra of pristine samples are analyzed and compared to devices showing or not signatures of single event leakage current (SELC) degradation. An additional peak labeled "C" with an activation energy of 0.17 eV below the conduction band edge is observed in the DLTS spectra of a sample degraded with SELC.

引用

页码：1892 / 1899

页数：8

共 25 条

[1] Ion-Induced Energy Pulse Mechanism for Single-Event Burnout in High-Voltage SiC Power MOSFETs and Junction Barrier Schottky Diodes [J].

Ball, D. R. ;

Hutson, J. M. ;

Javanainen, A. ;

Lauenstein, J. -M. ;

Galloway, K. F. ;

Johnson, R. A. ;

Alles, M. L. ;

Sternberg, A. L. ;

Sierawski, B. D. ;

Witulski, A. F. ;

Reed, R. A. ;

Schrimpf, R. D. .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2020, 67 (01) :22-28

[2] Characterization methods for defects and devices in silicon carbide [J].

Bathen, M. E. ;

Lew, C. T. -K. ;

Woerle, J. ;

Dorfer, C. ;

Grossner, U. ;

Castelletto, S. ;

Johnson, B. C. .

JOURNAL OF APPLIED PHYSICS, 2022, 131 (14)

[3] Influence of neutron radiation on majority and minority carrier traps in n-type 4H-SiC [J].

Capan, Ivana ;

Brodar, Tomislav ;

Yamazaki, Yuichi ;

Oki, Yuya ;

Ohshima, Takeshi ;

Chiba, Yoji ;

Hijikata, Yasuto ;

Snoj, Luka ;

Radulovic, Vladimir .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2020, 478 :224-228

[4] Minority Carrier Trap in n-Type 4H-SiC Schottky Barrier Diodes [J].

Capan, Ivana ;

Yamazaki, Yuichi ;

Oki, Yuya ;

Brodar, Tomislav ;

Makino, Takahiro ;

Ohshima, Takeshi .

CRYSTALS, 2019, 9 (07)

[5] Failure Analysis of Heavy Ion-Irradiated Schottky Diodes [J].

Casey, Megan C. ;

Lauenstein, Jean-Marie ;

Weachock, Ronald J. ;

Wilcox, Edward P. ;

Hua, Lang M. ;

Campola, Michael J. ;

Topper, Alyson D. ;

Ladbury, Raymond L. ;

LaBel, Kenneth A. .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2018, 65 (01) :269-279

[6]

Castaldini A, 2002, MATER SCI FORUM, V433-4, P439, DOI 10.4028/www.scientific.net/MSF.433-436.439

[7] Electrically active defects in irradiated 4H-SiC [J].

David, ML ;

Alfieri, G ;

Monakhov, EM ;

Hallén, A ;

Blanchard, C ;

Svensson, BG ;

Barbot, JF .

JOURNAL OF APPLIED PHYSICS, 2004, 95 (09) :4728-4733

[8] Detection statistics of deep levels in minority carrier transient spectroscopy [J].

Davidson, JA ;

Evans, JH .

JOURNAL OF APPLIED PHYSICS, 1997, 81 (01) :251-259

[9] Study of single-layer stacking faults in 4H-SiC by deep level transient spectroscopy [J].

Feklisova, O. V. ;

Yakimov, E. E. ;

Yakimov, E. B. .

APPLIED PHYSICS LETTERS, 2020, 116 (17)

[10]

Grossner U., 2021, Wide Bandgap Semiconductors for Power Electronics: Materials, Defects, Applications, Semiconductors and Semimetals, V91, P137, DOI [10.1002/9783527824724.ch6, DOI 10.1002/9783527824724.CH6]

← 1 2 3 →