Ellipsometry, transmission, and photoluminescence characterization of Mn-doped ITO thin films deposited by DC magnetron sputtering

被引:2
作者
Kaveh, Masoud [1 ]
Lawrence, David [2 ]
Bender, Scott [3 ]
Hirt, Daniel [3 ]
Riffe, William [3 ]
Constantin, Costel [1 ]
机构
[1] James Madison Univ, Dept Phys & Astron, Harrisonburg, VA 22807 USA
[2] James Madison Univ, Coll Integrated Sci & Engn, Harrisonburg, VA USA
[3] Univ Virginia, Dept Mech & Aerosp Engn, Charlottesville, VA USA
关键词
DC magnetron sputtering; Mn-ITO; thin films; ellipsometry; photoluminescence; bandgap; OPTICAL-PROPERTIES; ELECTRICAL-PROPERTIES; ELECTRONIC-STRUCTURE; IN2O3; FILMS; BAND-GAP; BEAM; FERROMAGNETISM; RECOMBINATION; ABSORPTION;
D O I
10.1088/2053-1591/acfecd
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Manganese-doped indium tin oxide (ITO) thin films (0-12.8 at% Mn) were deposited by DC magnetron sputtering. The structural, electrical, and optical properties of the films were studied. Optical characterization was emphasized and included ellipsometry, transmission, and photoluminescence (PL) measurements. Features of the energy band structure of ITO and Mn-ITO were extracted from PL spectra and Tauc analyses of absorption data. We concluded that the fundamental bandgap of ITO is similar to 2.8 eV. A separate deep valence band, similar to 0.8 eV below the valence band maximum, was confirmed to be involved in higher energy optical absorption and emission transitions. Both of these observations were consistent with recent published theoretical studies and spectroscopic measurements (XPS, XES, etc). Mn addition was found to result in a decrease of the transition energies. Additionally, Burstein-Moss shifts were observed.
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页数:13
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