Type-II GaSe/MoS2 van der Waals Heterojunction for High-Performance Flexible Photodetector

被引:3
作者
Wang, Shuai [1 ]
Tang, Xiaoqiu [1 ]
Alim, Ezimetjan [1 ]
Sun, Xingdong [1 ]
Wei, Zheng [1 ]
Tao, Hualong [1 ]
Wen, Yang [1 ]
Wu, Sumei [1 ]
Cai, Yongqing [2 ]
Wang, Yingying [3 ]
Liang, Yao [1 ]
Zhang, Zhihua [1 ]
机构
[1] Dalian Jiaotong Univ, Sch Mat Sci & Engn, Dalian 116028, Peoples R China
[2] Southern Univ Sci & Technol, Shenzhen Inst Quantum Sci & Engn, Shenzhen 518055, Peoples R China
[3] Harbin Inst Technol Weihai, Dept Optoelect Sci, Weihai 264209, Peoples R China
基金
中国国家自然科学基金;
关键词
type-II vdW heterojunction; GaSe; MoS2; flexible photodetector; OPTICAL-PROPERTIES; GASE NANOSHEETS; LAYER;
D O I
10.3390/cryst13111602
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
In recent years, two-dimensional (2D) type-II van der Waals (vdW) heterojunctions have emerged as promising candidates for high-performance photodetectors. However, direct experimental evidence confirming the enhancement of photoelectric properties by the heterojunction's type and structure remains scarce. In this work, we present flexible photodetectors based on individual GaSe and MoS2, as well as a vertically stacked type-II GaSe/MoS2 vdW heterojunction on polyethylene terephthalate (PET) substrate. These devices demonstrate outstanding responsivities and rapid response speeds, ensuring stable and repeatable light detection. It is notable that the GaSe/MoS2 heterojunction photodetector exhibits the highest on-off ratio and fastest response speed, attributed to the formation of type-II band alignment. Furthermore, the GaSe/MoS2 heterojunction photodetector maintains robust stability even in a bent state, highlighting remarkable flexibility. This work exemplifies the type-II vdW heterojunctions in enhancing photoelectric properties through direct in-situ experimentation, laying the groundwork for practical applications of 2D flexible photodetectors.
引用
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页数:13
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