Electronic properties of ionizing radiation-induced defects at SiO2/Si interfaceassociated with non-trivial excess current splitting

Low dose rate radiation experiments on gate controlled lateral PNP (GLPNP) transistors show a non-trivial splitting ofthe peak of the base current at various gate bias. The absolute and relative values of the two peaks vary with respect to the dose anddose rate. Through analytical calculations and for the first time, the splitting of the peaks was found to be attributed to the differentelectron (sigma e) and hole (sigma h) capture cross sections of the acceptor and donor-like defects formed on SiO2/Si interface. The resultsreveal that the ionizing radiation induces primarily two kinds of electronic active interface defects, which are different not only inthe energy spectrum but also the sigma e/sigma h. Significantly,sigma eand sigma hshould not be simplified to one effective cross section as commonlytreated, as their ratios play an essential role in determining the efficiency of e-h recombination with respect to the Fermi energy.