Thermomechanical model of an oxide-confined GaAs-based VCSEL emitter

被引：4

作者：

Coppeta, R. A. ^{[1
]}

Fabbro, R. ^{[2
]}

Pusterhofer, M. ^{[2
]}

Haber, T. ^{[1
]}

Fasching, G. ^{[1
]}

机构：

[1] Ams OSRAM, Premstaetten, Austria

[2] Graz Univ Technol, Graz, Austria

来源：

MICROELECTRONICS RELIABILITY | 2023年 / 140卷

关键词：

VCSEL; Dark line defects; Lattice mismatch; Oxide shrinkage; Thermal stress; RECOMBINATION; DEGRADATION;

D O I：

10.1016/j.microrel.2022.114828

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A thermomechanical model for an oxide-confined GaAs-based VCSEL emitter is presented. The impact of the lattice mismatch, the oxide shrinkage and the thermal stress on the mechanical reliability is evaluated. Under standard operating conditions, calculations show that the temperature increase has a negligible influence on the overall mechanical stress. The oxide shrinkage highly deforms the epitaxial structure at the edge of the optical aperture. At oxide corners, the calculated stress is beyond the experimental yield strength of GaAs micro-pillars, enabling the nucleation of the dislocations forming dark line defects. The high misfit stress in the quantum well layers can favor there the dislocation propagation.

引用

页数：7

共 52 条

[41] Interface structure of selectively oxidized AlAs/GaAs [J].