Scalable integration of hybrid high-κ dielectric materials on two-dimensional semiconductors

被引:110
|
作者
Xu, Yongshan [1 ]
Liu, Teng [1 ]
Liu, Kailang [1 ]
Zhao, Yinghe [1 ]
Liu, Lei [2 ,3 ]
Li, Penghui [4 ]
Nie, Anmin [4 ]
Liu, Lixin [1 ]
Yu, Jun [1 ]
Feng, Xin [1 ]
Zhuge, Fuwei [1 ]
Li, Huiqiao [1 ]
Wang, Xinran [2 ,3 ]
Zhai, Tianyou [1 ]
机构
[1] Huazhong Univ Sci & Technol, Sch Mat Sci & Engn, State Key Lab Mat Proc & Die & Mould Technol, Wuhan, Peoples R China
[2] Nanjing Univ, Sch Elect Sci & Engn, Natl Lab Solid State Microstruct, Nanjing, Peoples R China
[3] Nanjing Univ, Collaborat Innovat Ctr Adv Microstruct, Nanjing, Peoples R China
[4] Yanshan Univ, Ctr High Pressure Sci, State Key Lab Metastable Mat Sci & Technol, Qinhuangdao, Peoples R China
关键词
ATOMIC-LAYER-DEPOSITION; HIGH-K DIELECTRICS; MOLECULAR-DYNAMICS; MOS2; TRANSISTORS; GRAPHENE; AL2O3; FIELD; FILMS;
D O I
10.1038/s41563-023-01626-w
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Two-dimensional (2D) semiconductors are promising channel materials for next-generation field-effect transistors (FETs). However, it remains challenging to integrate ultrathin and uniform high-& kappa; dielectrics on 2D semiconductors to fabricate FETs with large gate capacitance. We report a versatile two-step approach to integrating high-quality dielectric film with sub-1 nm equivalent oxide thickness (EOT) on 2D semiconductors. Inorganic molecular crystal Sb2O3 is homogeneously deposited on 2D semiconductors as a buffer layer, which forms a high-quality oxide-to-semiconductor interface and offers a highly hydrophilic surface, enabling the integration of high-& kappa; dielectrics via atomic layer deposition. Using this approach, we can fabricate monolayer molybdenum disulfide-based FETs with the thinnest EOT (0.67 nm). The transistors exhibit an on/off ratio of over 10(6) using an ultra-low operating voltage of 0.4 V, achieving unprecedently high gating efficiency. Our results may pave the way for the application of 2D materials in low-power ultrascaling electronics. A van der Waals buffer layer of Sb2O3 enables the integration of high-& kappa; dielectric layer with sub-1 nm equivalent oxide thickness on two-dimensional semiconductors, resulting in high performance of two-dimensional field-effect transistors.
引用
收藏
页码:1078 / 1084
页数:10
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