Realizing Super-High Piezoelectricity and Excellent Fatigue Resistance in Domain-Engineered Bismuth Titanate Ferroelectrics

被引:51
作者
Xie, Shaoxiong [1 ,2 ]
Xu, Qian [3 ]
Chen, Qiang [2 ]
Zhu, Jianguo [4 ]
Wang, Qingyuan [1 ]
机构
[1] Chengdu Univ, Inst Adv Study, Chengdu 610106, Peoples R China
[2] Kyushu Univ, Dept Mech Engn, Fukuoka 8190395, Japan
[3] Xihua Univ, Sch Architecture & Civil Engn, Chengdu 610039, Peoples R China
[4] Sichuan Univ, Coll Mat Sci & Engn, Chengdu 610065, Peoples R China
基金
中国国家自然科学基金;
关键词
atomic-resolution polarization mapping; bismuth titanate; domain structures; electrical performance; lattice distortion; ENHANCED ELECTROMECHANICAL PROPERTIES; TRANSMISSION ELECTRON-MICROSCOPY; AURIVILLIUS CERAMICS; BI4TI3O12; CERAMICS; CRYSTAL-STRUCTURE; PHASE-CONTRAST; GRAIN-SIZE; MICROSTRUCTURE; PERFORMANCE; DISTORTION;
D O I
10.1002/adfm.202312645
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Bismuth titanate (BIT) is widely known as one of the most prospective lead-free ferroelectric and piezoelectric materials in advanced high-temperature sensing applications. Despite significant advances in developing BIT ferroelectrics, it still faces major scientific and engineering challenges in realizing super-high performance to meet next-generation high-sensitivity and light-weight applications. Here, a novel ferroelectric domain-engineered BIT ceramic system is conceived that exhibits super-high piezoelectric coefficient (d33 = 38.5 pC N-1) and inverse piezoelectric coefficient (d33* = 46.7 pm V-1) at low electric field as well as excellent fatigue resistance (stable up to 107 cycles). The results reveal that the introduction of high-density layered (001)-type 180 degrees domain walls with flexible polarization rotation features and the formation of small-size multi-domain states with low energy barriers are mainly responsible for the excellent electrical performance. To the best of knowledge, it is the first time to reveal such intriguing domain structures in BIT ceramics in detail, especially from the atomic-scale perspective by using atomic number (Z)-contrast imaging in combination with atomic-resolution polarization mapping. It is believed that this breakthrough conduces to comprehensively understand structural features of ferroelectric domains in BIT ceramics, and also opens a window for future developments of super-high performance in bismuth layer-structured ferroelectrics via domain engineering. A novel domain-engineered BIT ceramic system exhibits super-high piezoelectric performance (d33 = 38.5 pC N-1, d33* = 46.7 pm V-1) and excellent fatigue resistance (stable up to 107 cycles). It reveals that the introduction of high-density layered (001)-type 180 degrees domain walls with flexible polarization rotation features and the formation of small-size multi-domain states with low energy barriers are mainly responsible for the excellent electrical performance.image
引用
收藏
页数:13
相关论文
共 80 条
[1]   Image Analysis with Rapid and Accurate Two-Dimensional Gaussian Fitting [J].
Anthony, Stephen M. ;
Granick, Steve .
LANGMUIR, 2009, 25 (14) :8152-8160
[2]  
Aurivillius B., 1949, Arkiv Kemi, V1, P463
[3]   Understanding ferroelectricity in layered perovskites: new ideas and insights from theory and experiments [J].
Benedek, Nicole A. ;
Rondinelli, James M. ;
Djani, Hania ;
Ghosez, Philippe ;
Lightfoot, Philip .
DALTON TRANSACTIONS, 2015, 44 (23) :10543-10558
[4]   High-Performance [001]c-Textured PNN-PZT Relaxor Ferroelectric Ceramics for Electromechanical Coupling Devices [J].
Bian, Lang ;
Qi, Xudong ;
Li, Kai ;
Yu, Yang ;
Liu, Linjing ;
Chang, Yunfei ;
Cao, Wenwu ;
Dong, Shuxiang .
ADVANCED FUNCTIONAL MATERIALS, 2020, 30 (25)
[5]   Grain size and domain size relations in bulk ceramic ferroelectric materials [J].
Cao, WW ;
Randall, CA .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1996, 57 (10) :1499-1505
[6]   The grain size-dependent electrical properties of Bi4Ti3O12 piezoelectric ceramics [J].
Chen, Huanbei ;
Shen, Bo ;
Xu, Jinbao ;
Zhai, Jiwei .
JOURNAL OF ALLOYS AND COMPOUNDS, 2013, 551 :92-97
[7]   Discrimination between bulk and interface scenarios for the suppression of the switchable polarization (fatigue) in Pb(Zr,Ti)O3 thin films capacitors with Pt electrodes [J].
Colla, EL ;
Taylor, DV ;
Tagantsev, AK ;
Setter, N .
APPLIED PHYSICS LETTERS, 1998, 72 (19) :2478-2480
[8]   ELECTRICAL AND OPTICAL PROPERTIES OF FERROELECTRIC BI4TI3O12 SINGLE CRYSTALS [J].
CUMMINS, SE ;
CROSS, LE .
JOURNAL OF APPLIED PHYSICS, 1968, 39 (05) :2268-&
[9]   Reporting Excellent Transverse Piezoelectric and Electro-Optic Effects in Transparent Rhombohedral PMN-PT Single Crystal by Engineered Domains [J].
Deng, Chenguang ;
Ye, Lianxu ;
He, Chongjun ;
Xu, Guisheng ;
Zhai, Qinxiao ;
Luo, Haosu ;
Liu, Youwen ;
Bell, Andrew J. .
ADVANCED MATERIALS, 2021, 33 (43)
[10]   Why lanthanum-substituted bismuth titanate becomes fatigue free in a ferroelectric capacitor with platinum electrodes [J].
Ding, Y ;
Liu, JS ;
Qin, HX ;
Zhu, JS ;
Wang, YN .
APPLIED PHYSICS LETTERS, 2001, 78 (26) :4175-4177