Improved Modulation Bandwidth of c-Plane Micro-LED Arrays by Varying Si Doping in the Quantum Barrier

被引：3

作者：

Lei, Lei ^{[1
]}

Zhu, Zihe ^{[1
]}

Wei, Jiangxiong ^{[2
]}

Wang, Wenliang ^{[1
]}

Li, Guoqiang ^{[1
,3
]}

机构：

[1] South China Univ Technol, State Key Lab Luminescent Mat & Devices, Guangzhou 510641, Peoples R China

[2] South China Univ Technol, Sch Mat Sci & Engn, Guangzhou 510641, Peoples R China

[3] Guangdong Choicore Optoelect Co Ltd, Heyuan, Peoples R China

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2024年 / 71卷 / 03期

关键词：

Silicon; Bandwidth; Doping; Light emitting diodes; Current density; Substrates; Visible light communication; Micro-light-emitting diode (LED) arrays; response frequency; Si-doping; vertical structure; visible light communication (VLC); LIGHT-EMITTING-DIODES; COMMUNICATION; PERFORMANCE; FREQUENCY;

D O I：

10.1109/TED.2024.3350526

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Visible light communication (VLC) is animportant complementary technology to traditional radiofrequency (RF) communication due to the abundance ofavailable frequency resources and the high data rates.VLC systems are, however, constrained by the low-3 dBbandwidth of light-emitting diodes (LED) and high bit errorrates (BER). Herein, we propose a vertical-structure micro-LED array with an Si-doped first quantum barrier (FQB)that suppresses the quantum confinement Stark effect(QCSE), increasing the radiative recombination rate. Themicro-LED array exhibits an-3 dB bandwidth of 578 MHzat 2000 A/cm2when the Si doping content of the FQB is8x10(18)cm(-3). A data rate of 1.61 Gb/s with a BER of 3.51x10(-3)over the distance of 1 m free space was demon-strated using the on-off keying (OOK) modulation scheme.This work shows great potential for high-speed VLC sys-tems by proposing a simple way to improve communicationperformance

引用

页码：1969 / 1973

页数：5

共 43 条

[1] Ammonia flux tailoring on the quality of AlN epilayers grown by pulsed atomic-layer epitaxy techniques on (0001)-oriented sapphire substrates via MOCVD [J].

Abd Rahman, Mohd Nazri ;

Talik, Noor Azrina ;

Khudus, Muhammad I. M. Abdul ;

Sulaiman, Abdullah Fadil ;

Allif, Kamarul ;

Zahir, Norhilmi Mohd ;

Shuhaim, Ahmad .

CRYSTENGCOMM, 2019, 21 (12) :2009-2017

[2] Characteristics of efficiency droop in GaN-based light emitting diodes with an insertion layer between the multiple quantum wells and n-GaN layer [J].

Chang, S. P. ;

Wang, C. H. ;

Chiu, C. H. ;

Li, J. C. ;

Lu, Y. S. ;

Li, Z. Y. ;

Yang, H. C. ;

Kuo, H. C. ;

Lu, T. C. ;

Wang, S. C. .

APPLIED PHYSICS LETTERS, 2010, 97 (25)

[3] Evaluation of polarization field in InGaN/GaN multiple quantum well structures by using electroluminescence spectra shift [J].

Chen, Ping ;

Zhao, De-Gang ;

Jiang, De-Sheng ;

Yang, Jing ;

Zhu, Jian-Jun ;

Liu, Zong-Shun ;

Liu, Wei ;

Liang, Feng ;

Liu, Shuang-Tao ;

Xing, Yao ;

Zhang, Li-Qun .

CHINESE PHYSICS B, 2020, 29 (03)

[4] High-Bandwidth Green Semipolar (20-21) InGaN/GaN Micro Light-Emitting Diodes for Visible Light Communication [J].

Chen, Sung-Wen Huang ;

Huang, Yu-Ming ;

Chang, Yun-Han ;

Lin, Yue ;

Liou, Fang-Jyun ;

Hsu, Yu-Chien ;

Song, Jie ;

Choi, Joowon ;

Chow, Chi-Wai ;

Lin, Chien-Chung ;

Horng, Ray-Hua ;

Chen, Zhong ;

Han, Jung ;

Wu, Tingzhu ;

Kuo, Hao-Chung .

ACS PHOTONICS, 2020, 7 (08) :2228-2235

[5] Visible Light Communication in 6G: Advances, Challenges, and Prospects [J].

Chi, Nan ;

Zhou, Yingjun ;

Wei, Yiran ;

Hu, Fangchen .

IEEE VEHICULAR TECHNOLOGY MAGAZINE, 2020, 15 (04) :93-102

[6] Polarization Self-Screened Multiple Quantum Wells for Deep Ultraviolet Light-Emitting Diodes to Enhance the Optical Power [J].

Chu, Chunshuang ;

Tian, Kangkai ;

Shao, Hua ;

Che, Jiamang ;

Zhang, Yonghui ;

Zhang, Zi-Hui .

IEEE PHOTONICS JOURNAL, 2021, 13 (05)

[7] The effects of Si-doped prelayers on the optical properties of InGaN/GaN single quantum well structures [J].

Davies, M. J. ;

Dawson, P. ;

Massabuau, F. C. -P. ;

Oliver, R. A. ;

Kappers, M. J. ;

Humphreys, C. J. .

APPLIED PHYSICS LETTERS, 2014, 105 (09)

[8] High Light Extraction Efficiency AlGaInP LEDs With Proton Implanted Current Blocking Layer [J].

Dong, Yibo ;

Han, Jun ;

Xu, Chen ;

Xie, Yiyang ;

Xun, Meng ;

Pan, Guanzhong ;

Sun, Jie .

IEEE ELECTRON DEVICE LETTERS, 2016, 37 (10) :1303-1306

[9] GaN-Based High-Response Frequency and High-Optical Power Matrix Micro-LED for Visible Light Communication [J].

Huang, Yong ;

Guo, Zhiyou ;

Wang, Xiaojun ;

Li, Huazhi ;

Xiang, Dan .

IEEE ELECTRON DEVICE LETTERS, 2020, 41 (10) :1536-1539

[10] Excavating the Communication Performance in GaN-Based Green Micro-LEDs: Modular-Architectured p-Type Region [J].

Huang, Zhen ;

Tao, Renchun ;

Li, Duo ;

Yuan, Zexing ;

Sheng, Shanshan ;

Wang, Tao ;

Li, Tai ;

Chen, Zhaoying ;

Yuan, Ye ;

Kang, Junjie ;

Liang, Zhiwen ;

Wang, Qi ;

Tian, Pengfei ;

Shen, Bo ;

Wang, Xinqiang .

ADVANCED PHOTONICS RESEARCH, 2023, 4 (04)

← 1 2 3 4 5 →