La-doped BiFeO3 junction based random access multilevel nonvolatile memory

被引：5

作者：

Li, Dong ^{[1
]}

Zhu, Xiaodong ^{[1
]}

Wu, Yanan ^{[1
]}

Zhao, Jian ^{[1
]}

Zhang, Kaimin ^{[1
]}

Li, Rui ^{[1
]}

Hao, Danni ^{[1
]}

Ma, Yanqing ^{[1
,2
]}

Moro, Ramiro ^{[1
]}

Ma, Lei ^{[1
]}

机构：

[1] Tianjin Univ, Int Ctr Nanoparticles & Nanosyst, Tianjin 300072, Peoples R China

[2] Tianjin Univ, Key Lab Precis Measuring Technol & Instruments, Tianjin 300072, Peoples R China

来源：

MICROELECTRONIC ENGINEERING | 2023年 / 267卷

基金：

中国国家自然科学基金;

关键词：

Bismuth ferrite; Ferroelectric tunnel junctions; Multilevel resistive switching; Nonvolatile memory; ELECTRORESISTANCE;

D O I：

10.1016/j.mee.2022.111908

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Resistive switching devices are promising candidates for the next generation nonvolatile memories due to their outstanding performance, simplicity, and scalability. Among them, developing multilevel resistive switching has attracted great attention for its potential in significantly improving information storage density but without extra energy consumption. Although continuous multilevel resistive switching (CMRS) has been observed in many metal oxides and organic materials, achieving random access multilevel nonvolatile memories (RAMNM) with high speed and reliability is still pressingly needed for practical applications. Here, we have successfully fabri-cated a RAMNM based on high-performance pulse-width modulated memristive ferroelectric tunnel junctions (FTJs) of Pt/La0.1Bi0.9FeO3/Nb:SrTiO3 with giant switching ratios above 4 x 105 at room temperature.

引用

页数：6

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