High-Q Transformer Neutralization Technique for W-Band Dual-Band LNA Using 0.1 μm GaAs pHEMT Technology

被引：0
作者：
Sim, Taejoo [1 ]
Lee, Dong-min [1 ]
Kim, Wansik [2 ]
Kim, Kichul [3 ]
Choi, Jeung Won [3 ]
Kim, Min Su [4 ]
Kim, Junghyun [1 ]
机构：
[1] Hanyang Univ, Dept Elect & Syst Engn, Ansan, South Korea
[2] LIGNex1, Microwave & Antenna R&D, Yongin, South Korea
[3] Agcy Def Dev, Daejeon, South Korea
[4] Mokpo Natl Univ, Dept Informat & Elect Engn, Muan, South Korea
来源：
JOURNAL OF ELECTROMAGNETIC ENGINEERING AND SCIENCE | 2023年 / 23卷 / 06期
关键词：
LNA; Dual-Band; GaAs pHEMT; Transformer-Based Neutralization; W-Band;
D O I：
10.26866/jees.2023.6.r.193
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this study, a dual-band low-noise amplifier (LNA) was implemented by applying a transformer-based neutralization technology to the W-band. Incorporating the neutralization technique was difficult owing to performance degradation in the W-band. However, circuit performance was enhanced thanks to the layout optimization of transformer-based neutralization networks, and the improved operation was confirmed in the W-band. The neutralization technique was implemented in four stages with a 0.1-mu m gallium arsenide (GaAs) pseudomorphic high-electron-mobility-transistor monolithic microwave integrated circuit LNA. The LNA showed small signal gains of 20.3 dB and 21.7 dB and noise figures of 5.0 dB and 6.4 dB (at 84 GHz and 96 GHz, respectively) while consuming 46 mW from a 1-V supply.
引用
收藏
页码：482 / 489
页数：8
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