High-Q Transformer Neutralization Technique for W-Band Dual-Band LNA Using 0.1 μm GaAs pHEMT Technology

被引：0
作者：
Sim, Taejoo [1 ]
Lee, Dong-min [1 ]
Kim, Wansik [2 ]
Kim, Kichul [3 ]
Choi, Jeung Won [3 ]
Kim, Min Su [4 ]
Kim, Junghyun [1 ]
机构：
[1] Hanyang Univ, Dept Elect & Syst Engn, Ansan, South Korea
[2] LIGNex1, Microwave & Antenna R&D, Yongin, South Korea
[3] Agcy Def Dev, Daejeon, South Korea
[4] Mokpo Natl Univ, Dept Informat & Elect Engn, Muan, South Korea
来源：
JOURNAL OF ELECTROMAGNETIC ENGINEERING AND SCIENCE | 2023年 / 23卷 / 06期
关键词：
LNA; Dual-Band; GaAs pHEMT; Transformer-Based Neutralization; W-Band;
D O I：
10.26866/jees.2023.6.r.193
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this study, a dual-band low-noise amplifier (LNA) was implemented by applying a transformer-based neutralization technology to the W-band. Incorporating the neutralization technique was difficult owing to performance degradation in the W-band. However, circuit performance was enhanced thanks to the layout optimization of transformer-based neutralization networks, and the improved operation was confirmed in the W-band. The neutralization technique was implemented in four stages with a 0.1-mu m gallium arsenide (GaAs) pseudomorphic high-electron-mobility-transistor monolithic microwave integrated circuit LNA. The LNA showed small signal gains of 20.3 dB and 21.7 dB and noise figures of 5.0 dB and 6.4 dB (at 84 GHz and 96 GHz, respectively) while consuming 46 mW from a 1-V supply.
引用
收藏
页码：482 / 489
页数：8
相关论文
共 50 条
[31]   A High Linearity W-Band LNA With 21-dB Gain and 5.5-dB NF in 0.13 μm SiGe BiCMOS [J].
Li, Huanbo ;
Chen, Jixin ;
Hou, Debin ;
Yan, Pinpin ;
Hong, Wei .
2020 50TH EUROPEAN MICROWAVE CONFERENCE (EUMC), 2020, :1019-1022
[32]   A fully integrated concurrent dual-band low-noise amplifier using InGaP/GaAs hbt technology [J].
Lin, Yu-Tso ;
Lu, Shey-Shi .
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 2007, 49 (11) :2763-2765
[33]   Double-layer symmetric gratings with bound states in the continuum for dual-band high-Q optical sensing [J].
Shi, Chaoying ;
Hu, Jinhua ;
Liu, Xiuhong ;
Liang, Junfang ;
Zhao, Jijun ;
Han, Haiyan ;
Zhu, Qiaofen .
BEILSTEIN JOURNAL OF NANOTECHNOLOGY, 2022, 13 :1408-1417
[34]   A W-band Direct-conversion I-Q Mixer in 0.13μm SiGe BiCMOS Technology [J].
Liu, Wei ;
Liu, Haitao ;
Wang, Ruitao ;
Li, Yihu ;
Cheng, Xu ;
Xiong, Yong-Zhong .
2016 IEEE MTT-S INTERNATIONAL WIRELESS SYMPOSIUM (IWS), 2016,
[35]   Design of a W-band High-PAE Class A & AB Power Amplifier in 150 nm GaAs Technology [J].
Lee, Jun Yan ;
Wu, Duo ;
Guo, Xuanrui ;
Ariannejad, Mohammadmahdi ;
Bhuiyan, Mohammad Arif Sobhan ;
Miraz, Mahdi H. .
TRANSACTIONS ON ELECTRICAL AND ELECTRONIC MATERIALS, 2024, 25 (03) :304-313
[36]   Design of a W-band High-PAE Class A & AB Power Amplifier in 150 nm GaAs Technology [J].
Jun Yan Lee ;
Duo Wu ;
Xuanrui Guo ;
Mohammadmahdi Ariannejad ;
Mohammad Arif Sobhan Bhuiyan ;
Mahdi H. Miraz .
Transactions on Electrical and Electronic Materials, 2024, 25 :304-313
[37]   Low Noise and High Gain Dual-band Active Band-pass Filter with GaAs MESFET Using CRLH Metamaterial [J].
Yoon, Ki-Cheol ;
Lee, Jaegook ;
Lee, Hyunwook ;
Lee, Jong-Chul .
2013 ASIA-PACIFIC MICROWAVE CONFERENCE PROCEEDINGS (APMC 2013), 2013, :697-699
[38]   A Low Phase Noise Ka-Band Voltage Controlled Oscillator Using 0.15 μm GaAs pHEMT Technology [J].
Kao, H. L. ;
Shih, S. P. ;
Yeh, C. S. ;
Chang, L. C. .
2012 IEEE 15TH INTERNATIONAL SYMPOSIUM ON DESIGN AND DIAGNOSTICS OF ELECTRONIC CIRCUITS & SYSTEMS (DDECS), 2012, :79-82
[39]   Compact Millimeter-Wave On-Chip Dual-Band Bandpass Filter in 0.15-μm GaAs Technology [J].
Xu, Kai-Da ;
Xia, Shengpei ;
Jiang, Yannan ;
Guo, Ying-Jiang ;
Liu, Yiqun ;
Wu, Rui ;
Cui, Jianlei ;
Chen, Qiang .
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2022, 10 :152-156
[40]   Q/V band LNA for satellite on-board space applications using a 70 nanometers GaAs mHEMT commercial technology [J].
Ciccognani, Walter ;
Longhi, Patrick E. ;
Colangeli, Sergio ;
Limiti, Ernesto .
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 2018, 60 (09) :2185-2190
12345