High-Performance Short-Channel Top-Gate Indium-Tin-Oxide Transistors by Optimized Gate Dielectric

被引：5
|
作者：
Gu, Chengru [1 ,2 ]
Hu, Qianlan [3 ]
Zhu, Shenwu [1 ,2 ]
Li, Qijun [1 ,2 ]
Zeng, Min [1 ,2 ]
Liu, Honggang [1 ,2 ]
Kang, Jiyang [1 ,2 ]
Liu, Shiyuan [3 ]
Wu, Yanqing [1 ,2 ,3 ]
机构：
[1] Huazhong Univ Sci & Technol, Sch Opt & Elect Informat, Wuhan 430074, Peoples R China
[2] Huazhong Univ Sci & Technol, Wuhan Natl High Magnet Field Ctr, Wuhan 430074, Peoples R China
[3] Peking Univ, Beijing Adv Innovat Ctr Integrated Circuits, Sch Integrated Circuits, Beijing 100871, Peoples R China
来源：
IEEE ELECTRON DEVICE LETTERS | 2023年 / 44卷 / 05期
关键词：
Indium-tin-oxide; top-gate; atomic layer deposition; HfLaO;
D O I：
10.1109/LED.2023.3262684
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this work, high-performance top-gate indium-tin-oxide (ITO) transistors with high carrier mobility of 60 cm(2)/V center dot s have been successfully demonstrated using optimized atomic layer deposited (ALD) La-doped HfO2 as the top-gate dielectric. The scaled device with a channel length of 50 nm exhibits a high current on/off ratio over 7 x 10(9) owing to the excellent electrostatic control. A maximum output current of 1680 mu A/mu m with a remarkable carrier velocity of 0.87 x 107 cm/s has also been achieved due to the record low contact resistance of 180 Omega center dot mu m. The on- and off-state performance of our ITO transistors are the highest among previous top-gate amorphous oxide semiconductors.
引用
收藏
页码：837 / 840
页数：4
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