High-performance enhancement-mode GaN-based p-FETs fabricated with O3-Al2O3/HfO2-stacked gate dielectric

被引：1

作者：

Jin, Hao ^{[1
,2
]}

Huang, Sen ^{[1
,2
]}

Jiang, Qimeng ^{[1
]}

Wang, Yingjie ^{[1
,2
]}

Fan, Jie ^{[1
]}

Yin, Haibo ^{[1
,2
]}

Wang, Xinhua ^{[1
,2
]}

Wei, Ke ^{[1
,2
]}

Liu, Jianxun ^{[3
]}

Zhong, Yaozong ^{[3
]}

Sun, Qian ^{[3
]}

Liu, Xinyu ^{[1
,2
]}

机构：

[1] Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China

[2] Univ Chinese Acad Sci, Beijing 100049, Peoples R China

[3] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R China

来源：

JOURNAL OF SEMICONDUCTORS | 2023年 / 44卷 / 10期

基金：

中国国家自然科学基金;

关键词：

GaN; p-FETs; enhancement-mode; HfO2; subthreshold swing; TRANSISTORS; TECHNOLOGY;

D O I：

10.1088/1674-4926/44/10/102801

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

In this letter, an enhancement-mode (E-mode) GaN p-channel field-effect transistor (p-FET) with a high current density of -4.9 mA/mm based on a O-3-Al2O3/HfO2 (5/15 nm) stacked gate dielectric was demonstrated on a p(++)-GaN/p-GaN/AlN/AlGaN/AlN/GaN/Si heterostructure. Attributed to the p(++)-GaN capping layer, a good linear ohmic I-V characteristic featuring a low-contact resistivity (rho(c)) of 1.34 x 10(-4) omega center dot cm(2) was obtained. High gate leakage associated with the HfO2 high-k gate dielectric was effectively blocked by the 5-nm O-3-Al2O3 insertion layer grown by atomic layer deposition, contributing to a high I ON/I OFF ratio of 6 x 10(6) and a remarkably reduced subthreshold swing (SS) in the fabricated p-FETs. The proposed structure is compelling for energy-efficient GaN complementary logic (CL) circuits.

引用

页数：5

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