Improving the semiconductor performance of SnO2/CdS/CuBi2O4 by optimizing the optical properties of the CuBi2O4 absorbent layer

被引：1

作者：

Bliya, A. ^{[1
]}

Lachhab, Saad Eddin ^{[1
]}

Al Ibrahmi, E. ^{[1
]}

机构：

[1] IbnTofail Univ Kenitra, Fac Sci, Kenitra, Morocco

来源：

MICRO AND NANOSTRUCTURES | 2023年 / 183卷

关键词：

Absorbent layer; Efficiency performance; SCAPS-1D program;

D O I：

10.1016/j.micrna.2023.207667

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

In this research, CuBi2O4 is numerically studied as an absorber layer in the SnO2/CdS/CuBi2O4 structure to evaluate and enhance its efficiency. Using the SCAPS-1D program, the CuBi2O4 layer underwent testing with variations in thickness, gap energy (Eg), temperature, and donor charge carrier concentration (Na). The results obtained indicated a significant improvement in the efficiency of this structure, achieving a yield of 32.89% with Voc = 1.302 V, Jsc = 39.556 mA/cm2, and FF = 86.95% when the CuBi2O4 layer was 1.6 mu m thickness, Eg = 1.6 eV, and Na = 1019 cm-3 under thermal conditions with temperature greater than 340 K. This efficiency value is higher than the 32.3% reported in the literature.

引用

页数：7