Comprehensive Study on Ultra-Wide Band Gap La2O3/ε-Ga2O3 p-n Heterojunction Self-Powered Deep-UV Photodiodes for Flame Sensing

被引：45

作者：

Xi, Zhaoying ^{[1
]}

Liu, Zeng ^{[1
,2
]}

Yang, Lili ^{[1
,2
]}

Tang, Kai ^{[3
]}

Li, Lei ^{[1
]}

Shen, Gaohui ^{[1
]}

Zhang, Maolin ^{[1
,2
]}

Li, Shan ^{[1
,2
]}

Guo, Yufeng ^{[1
,2
]}

Tang, Weihua ^{[1
,2
]}

机构：

[1] Nanjing Univ Posts & Telecommun, Coll Integrated Circuit Sci & Engn, Innovat Ctr Gallium Oxide Semicond IC GAO, Nanjing 210023, Peoples R China

[2] Nanjing Univ Posts & Telecommun, Natl & Local Joint Engn Lab RF Integrat & Microass, Nanjing 210023, Peoples R China

[3] Nanjing Univ Aeronaut & Astronaut, Coll Phys, MIIT Key Lab Aerosp Informat Mat & Phys, Key Lab Intelligent Nano Mat & Devices, Nanjing 211106, Peoples R China

来源：

ACS APPLIED MATERIALS & INTERFACES | 2023年 / 15卷 / 34期

基金：

中国国家自然科学基金;

关键词：

La2O3/e-Ga2O3; p-n heterojunction; solar blind; photodetector; self-powered; flame sensor; SOLAR-BLIND PHOTODETECTOR; PERFORMANCE;

D O I：

10.1021/acsami.3c07597

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Solar-blind UV photodetectors have outstanding reliability and sensitivity in flame detection without interference from other signals and response quickly. Herein, we fabricated a solar-blind UV photodetector based on a La2O3/e-Ga2O3 p-n heterojunction with a typical type-II band alignment. Benefiting from the photovoltaic effect formed by the space charge region across the junction interface, the photodetector exhibited a self-powered photocurrent of 1.4 nA at zero bias. Besides, this photodetector demonstrated excellent photo-to-dark current ratio of 2.68 x 10(4) under 254 nm UV light illumination and at a bias of 5 V, and a high specific detectivity of 2.31 x 10(11) Jones and large responsivity of 1.67 mA/W were achieved. Importantly, the La2O3/e-Ga2O3 heterojunction photodetector can rapidly respond to flames in milliseconds without any applied biases. Based on the performances described above, this novel La2O3/e-Ga2O3 heterojunction is expected to be a candidate for future energy-efficient fire detection.

引用

页码：40744 / 40752

页数：9

共 52 条

[1] Deep ultraviolet photodetectors based on p-Si/i-SiC/n-Ga2O3 heterojunction by inserting thin SiC barrier layer [J].