Collective Modes in the Luminescent Response of Si Nanodisk Chains with Embedded GeSi Quantum Dots

被引：2
作者：
Zinovyev, Vladimir A. [1 ]
Smagina, Zhanna V. [1 ]
Zinovieva, Aigul F. [1 ,2 ]
Rodyakina, Ekaterina E. [1 ,2 ]
Kacyuba, Aleksey V. [1 ]
Astankova, Ksenya N. [1 ]
Volodin, Vladimir A. [1 ,2 ]
Baryshnikova, Kseniia V. [3 ]
Petrov, Mihail I. [3 ]
Mikhailovskii, Mikhail S. [3 ]
Verbus, Valery A. [4 ,5 ]
Stepikhova, Margarita V. [5 ]
Novikov, Alexey V. [5 ]
机构：
[1] Russian Acad Sci, Rzhanov Inst Semicond Phys, Siberian Branch, Novosibirsk 630090, Russia
[2] Novosibirsk State Univ, Dept Phys, Novosibirsk 630090, Russia
[3] ITMO Univ, Dept Phys & Engn, St Petersburg 197101, Russia
[4] Natl Res Univ Higher Sch Econ, Dept Econ, Nizhnii Novgorod 603155, Russia
[5] Russian Acad Sci, Inst Phys Microstruct, Nizhnii Novgorod 603950, Russia
来源：
PHOTONICS | 2023年 / 10卷 / 11期
基金：
俄罗斯科学基金会;
关键词：
photoluminescence; GeSi quantum dots; disk resonator; quality factor; EMISSION; LIGHT; RESONANCES; METASURFACE; ISLANDS; DRIVEN; STATES;
D O I：
10.3390/photonics10111248
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
In this paper, we study the effects of GeSi quantum dot emission coupling with the collective modes in the linear chains of Si disk resonators positioned on an SiO2 layer. The emission spectra as a function of the chain period and disk radius were investigated using micro-photoluminescence (micro-PL) spectroscopy. At optimal parameters of the disk chains, two narrow PL peaks, with quality factors of around 190 and 340, were observed in the range of the quantum dot emission. A numerical analysis of the mode composition allowed us to associate the observed peaks with two collective modes with different electric field polarization relative to the chain line. The theoretical study demonstrates the change of the far-field radiation pattern with increasing length of the disk chain. The intensive out-of-plane emission was explained by the appearance of the dipole mode contribution. The obtained results can be used for the development of Si-based near-infrared light sources.
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页数：14
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