low temperature magnetization curves;
Ni-Zn ferrite;
law of approach to saturation;
FT-Raman;
anisotropy;
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D O I:
10.1088/1402-4896/acccb7
中图分类号:
O4 [物理学];
学科分类号:
0702 ;
摘要:
Ni-Zn ferrite of compositional formula Ni0.5Zn0.5Fe2O4 was prepared by co-precipitation method. The effect of heat treatment at 600 degrees C, 800 degrees C, 1000 degrees C and 1200 degrees C on their structures and hence magnetic properties were investigated. Their phase analysis and morphological studies was done using XRD, FTIR, FT-Raman and SEM-EDAX. Room temperature magnetization loops of the prepared materials were recorded up to a maximum applied field of 15 kOe to study the effect of structural variation on magnetic properties. Further, magnetization loops of Ni-Zn ferrite heated at 1200 degrees C were recorded at 150 K and 50 K to investigate the variation of magnetic properties at low temperatures. Law of approach to saturation magnetization was applied to all the magnetization curves under investigation. The fitted parameters reveal information on the processes of magnetization, anisotropy constant, and saturation magnetization of Ni-Zn ferrites. Law of approach to saturation magnetization in the form M = M ( s ) (1- b/H (2)) + cH was also found to be successfully applicable to magnetization curves of all the prepared Ni-Zn ferrites in room temperature as well as low temperatures. Its application and significant results were also discussed in detailed.
机构:
China Univ Geosci, Sch Engn & Technol, Beijing 100083, Peoples R ChinaChina Univ Geosci, Sch Engn & Technol, Beijing 100083, Peoples R China
Peng, Zhijian
Fu, Xiuli
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Beijing Univ Posts & Telecommun, Sch Sci, Beijing 100876, Peoples R ChinaChina Univ Geosci, Sch Engn & Technol, Beijing 100083, Peoples R China
Fu, Xiuli
Ge, Huilin
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China Univ Geosci, Sch Engn & Technol, Beijing 100083, Peoples R ChinaChina Univ Geosci, Sch Engn & Technol, Beijing 100083, Peoples R China
Ge, Huilin
Fu, Zhiqiang
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China Univ Geosci, Sch Engn & Technol, Beijing 100083, Peoples R ChinaChina Univ Geosci, Sch Engn & Technol, Beijing 100083, Peoples R China
Fu, Zhiqiang
Wang, Chengbiao
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China Univ Geosci, Sch Engn & Technol, Beijing 100083, Peoples R ChinaChina Univ Geosci, Sch Engn & Technol, Beijing 100083, Peoples R China
Wang, Chengbiao
Qi, Longhao
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机构:
Tsinghua Univ, State Key Lab New Ceram & Fine Proc, Beijing 100084, Peoples R ChinaChina Univ Geosci, Sch Engn & Technol, Beijing 100083, Peoples R China
Qi, Longhao
Miao, Hezhuo
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Tsinghua Univ, State Key Lab New Ceram & Fine Proc, Beijing 100084, Peoples R ChinaChina Univ Geosci, Sch Engn & Technol, Beijing 100083, Peoples R China
机构:
Anna Univ Chennai, Dept Phys, BIT Campus, Tiruchirappalli 620024, Tamil Nadu, IndiaAnna Univ Chennai, Dept Phys, BIT Campus, Tiruchirappalli 620024, Tamil Nadu, India
Umapathy, G.
Senguttuvan, G.
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Anna Univ Chennai, Dept Phys, BIT Campus, Tiruchirappalli 620024, Tamil Nadu, IndiaAnna Univ Chennai, Dept Phys, BIT Campus, Tiruchirappalli 620024, Tamil Nadu, India
Senguttuvan, G.
Berchmans, L. John
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Cent Electrochem Res Inst, CSIR, Electropyro Met Div, Karaikkudi 630006, Tamil Nadu, IndiaAnna Univ Chennai, Dept Phys, BIT Campus, Tiruchirappalli 620024, Tamil Nadu, India
Berchmans, L. John
Sivakumar, V.
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Anna Univ Chennai, Dept Phys, BIT Campus, Tiruchirappalli 620024, Tamil Nadu, IndiaAnna Univ Chennai, Dept Phys, BIT Campus, Tiruchirappalli 620024, Tamil Nadu, India
Sivakumar, V.
Jegatheesan, P.
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PSNA Coll Engn & Technol, Dept Phys, Dindigul 624622, Tamil Nadu, IndiaAnna Univ Chennai, Dept Phys, BIT Campus, Tiruchirappalli 620024, Tamil Nadu, India