Effect of deposition time on the structural and electrical properties of electrodeposited PSi/Cu2O/ZnO heterojunction

被引：2

作者：

Utlu, Gokhan ^{[1
]}

Cetinel, Alper ^{[1
]}

机构：

[1] Ege Univ, Dept Phys, TR-35030 Bornova, Izmir, Turkiye

来源：

CHEMICAL PHYSICS LETTERS | 2023年 / 820卷

关键词：

Cu2O/ZnO; Porous silicon; Electrochemical deposition; Heterojunction; Photoresponse; CURRENT-DENSITY; GROWTH; SILICON; LIGHT;

D O I：

10.1016/j.cplett.2023.140449

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Cu2O/ZnO nanostructures were grown on a porous silicon (PSi) via electrochemical deposition. The influence of deposition-time on Cu2O/ZnO nanostructure was carefully investigated. FE-SEM investigation indicated that pyramid-Cu2O nanostructures were formed, while ZnO nanostructures changed from pellet to nanorods depending on deposition-time. XRD and XPS analyses showed that the structure had high crystallinity. I-V analysis shows the samples had rectifier features and functioned-like a p-n heterojunction. Best ideality factor and the photoresponse-time were obtained at 0.7 mA/cm(2) current density and for the 20-min of deposition-time. The results provide a new sight for the development of optoelectronic devices based on PSi/Cu2O/ZnO nanostructures.

引用

页数：8

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