Generation of Quantum-dot Photon Emission in h-BN via Local Strain Engineering

被引:0
作者
Ma, Liang [1 ]
Hu, Yucheng [1 ]
Zhou, Zeyi [1 ]
Zhu, Bo [1 ]
Zheng, Wenjie [1 ]
Zhang, Rui [1 ]
机构
[1] Anhui Univ, Sch Phys & Optoelect Engn, Hefei 230039, Peoples R China
基金
中国国家自然科学基金;
关键词
hexagonal boron nitride; silica nanospheres; local strain; quantum dots; quantum emission; EMITTERS;
D O I
10.1007/s11595-023-2762-9
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We reported a low-cost and easy-to-make method to effectively generate quantum dot (QD) states in 2D hBN films for quantum emissions at room temperature by utilizing silica nanospheres, in comparison with the sophisticated nanofabrication method reported in previous studies. The QDs created in 2D hBN films using silica nanospheres exhibit pronounced photon emissions with a good photo-stability in air, a narrow distribution of the emission peaks within the range of 580-620 nm, and a directional emission pattern, behaving as a single electric dipole. Our work develops the method of controllable fabrication of quantum emitters in 2D materials by using nano materials and structures.
引用
收藏
页码:803 / 806
页数:4
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