Robust Second-Order Topological Insulators with Giant Valley Polarization in Two-Dimensional Honeycomb Ferromagnets

被引:56
作者
Li, Runhan [1 ]
Mao, Ning [1 ]
Wu, Xinming [1 ]
Huang, Baibiao [1 ]
Dai, Ying [1 ]
Niu, Chengwang [1 ]
机构
[1] Shandong Univ, Sch Phys, State Key Lab Crystal Mat, Jinan 250100, Peoples R China
基金
中国国家自然科学基金;
关键词
magnetic topological states; second-order topological insulators; valleytronics; two-dimensional materials; TRANSITION;
D O I
10.1021/acs.nanolett.2c03680
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Magnetic topological states have attracted great attention that provide exciting platforms for exploring prominent physical phenomena and applications of topological spintronics. Here, using a tight-binding model and first-principles calculations, we put forward that, in contrast to previously reported magnetic second-order topological insulators (SOTIs), robust SOTIs can emerge in two-dimensional ferromagnets regardless of magnetization directions. Remarkably, we identify intrinsic ferromagnetic 2H-RuCl2 and Janus VSSe monolayers as experimentally feasible candidates of predicted robust SOTIs with the emergence of nontrivial corner states along different magnetization directions. Moreover, under out-of-plane magnetization, we unexpectedly point out that the valley polarization of SOTIs can be huge and much larger than that of the known ferrovalley materials, opening up a technological avenue to bridge the valleytronics and higher-order topology with high possibility of innovative applications in topological spintronics and valleytronics.
引用
收藏
页码:91 / 97
页数:7
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