Dielectric properties and ferroelectric resistive switching mechanism in the epitaxial (111) BiFeO3 films

被引：3
作者：
Wei, Yi [1 ,2 ]
Liu, Zhuo [3 ,4 ]
Xu, Dianguo [1 ,2 ]
Dong, Lei [3 ]
Li, Gang [3 ]
Wang, Yunming [3 ]
Fan, Feng [2 ]
Meng, Xudong [5 ]
Song, Jianmin [3 ]
机构：
[1] Hebei Univ Engn, Handan, Peoples R China
[2] Hebei Univ Engn, Sch Math & Phys, Handan, Peoples R China
[3] Hebei Agr Univ, Coll Sci, Baoding, Peoples R China
[4] Hebei Agr Univ, Coll Mech & Elect Engn, Baoding, Peoples R China
[5] Hebei North Univ, Coll Sci, Zhangjiakou, Peoples R China
来源：
FERROELECTRICS | 2023年 / 613卷 / 01期
关键词：
Magnetron sputtering; bismuth ferrite; thin film; heterostructure; ferroelectric properties; resistive switching;
D O I：
10.1080/00150193.2023.2215502
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Resistive random access memory is promising for next-generation nonvolatile memory, which has high memory density, low power consumption, and fast read/write speed. However, the resistive switching (RS) mechanism in oxide ferroelectric thin film devices is still unclear. In this paper, Pt/BiFeO3/La0.5Sr0.5CoO3(Pt/BFO/LSCO) heterostructures were deposited on (111)SrTiO3(STO) substrates by magnetron sputtering. X-ray diffraction confirmed the epitaxial relationship between (111)BFO//(111)LSCO//(111)STO. Atomic force microscopy (AFM) showed that (111)BFO had an island structure with uniform grain distribution. The Pt/(111)BFO/(111)LSCO heterostructures exhibit obvious ferroelectricity and RS effects. The results of C-V analysis and I-V fitting indicate that the RS is caused by the space-charge-limited conduction mechanism.
引用
收藏
页码：97 / 103
页数：7
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