0.5μm Pitch Next Generation Hybrid Bonding with High Alignment Accuracy for 3D Integration

被引：11
|
作者：
Netzband, Christopher [1 ]
Ryan, Kevin [1 ]
Mimura, Yuji [1 ]
Ilseok, Son [1 ]
Aizawa, Hirokazu [1 ]
机构：
[1] TEL Technol Ctr Amer LLC, Albany, NY 12203 USA
来源：
2023 IEEE 73RD ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE, ECTC | 2023年
关键词：
Hybrid Bonding; 3D Integration; 0.5 mu m Bonding Pitch; Bonding Alignment;
D O I：
10.1109/ECTC51909.2023.00188
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Copper to copper hybrid bonding is a key area of development for many devices. A major focus of hybrid bonding development is reducing the size of the bond pads. The current hybrid bonding node is 0.5 mu m pads at 1 mu m pitch. While scaling down from this size new challenges will be encountered in CMP, mask layout, and bonding tool configuration. By understanding the incoming wafer conditions and how tool settings impact bonding, we have achieved void free bonding of 0.25 mu m bond pads at 0.5 mu m pitch with a maximum displacement <50nm across the wafer entire.
引用
收藏
页码：1100 / 1104
页数：5
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