A simple new method for retrieving spectral changes of the refractive index of thin films from transmission spectra

被引:6
作者
Alharshan, Gharam A. [1 ]
Uosif, M. A. M. [2 ]
Yousef, El Sayed [3 ,4 ]
Emam-Ismail, M. [5 ,8 ,9 ]
Shaaban, E. R. [6 ]
El-Hagary, M. [7 ]
机构
[1] Princess Nourah Bint Abdulrahman Univ, Coll Sci, Phys Dept, POB 84428, Riyadh 11671, Saudi Arabia
[2] Jouf Univ, Coll Sci, Phys Dept, POB 2014, Sakaka, Saudi Arabia
[3] King Khalid Univ, Res Ctr Adv Mat Sci RCAMS, POB 9004, Abha 61413, Saudi Arabia
[4] King Khalid Univ, Fac Sci, Phys Dep, POB 9004, Abha, Saudi Arabia
[5] Galala Univ, Fac Sci, Phys Dept, Spect Polarized Light Lab, New Galala City 43511, Suez, Egypt
[6] Al Azhar Univ, Fac Sci, Phys Dept, Assiut 71542, Egypt
[7] Helwan Univ, Fac Sci, Phys Dept, Cairo 11792, Egypt
[8] Ain Shams Univ, Fac Sci, Phys Dept, Thin Films Lab, Cairo 11566, Egypt
[9] Galala Univ, Fac Sci, Phys Dept, New Galala City 43511, Suez, Egypt
关键词
Transmission spectrum; Semiconductors thin films; Refractive index; OPTICAL-CONSTANTS; SPECTROSCOPIC ELLIPSOMETRY; SURFACE-ROUGHNESS; DISPERSION; PARAMETERS; THICKNESS; MICROSTRUCTURE; BEHAVIOR;
D O I
10.1016/j.optmat.2023.114584
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A new method for calculating the refractive index spectral behaviour of thin films is presented. The method is based on introducing the idea of the order of appearance technique to accurately find the order of interference and Cauchy fitting parameters of the interference peaks observed in the transmission spectra of the thin film under investigation. A very simple mathematical relationship was found that relates the order of appearance and wavenumber of the interference peaks observed in the transmission spectrum. Fitting the data extracted from the measured transmission spectra to the newly found simple mathematical relation, we can extract the order of interference and Cauchy fitting parameters of the thin film under investigation. In addition, the thickness of the film was extracted and found to agree well with the thickness measured using the spectroscopic ellipsometery technique. The proposed method of calculation was successfully applied to five binary semiconductor samples, which are ZnO, ZnTe, ZnS, ZnSe, and SiO2. A very good agreement was found between the proposed method of calculation and the well-known method presented by Swanepoel. Finally, the effect of surface roughness on the FECO peak wavelength was discussed.
引用
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页数:10
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