A 160-GHz, 10-dBm power amplifier for D-band communication in 0.1-μm GaAs pHEMT

被引：3

作者：

Soma, Tatsuya ^{[1
]}

Ito, Masaharu ^{[1
]}

Wada, Yasushi ^{[1
]}

机构：

[1] NEC Corp Ltd, Kawasaki, Kanagawa, Japan

来源：

2023 IEEE TOPICAL CONFERENCE ON RF/MICROWAVE POWER AMPLIFIERS FOR RADIO AND WIRELESS APPLICATIONS | 2023年

关键词：

GaAs; pHEMT; Amplifier; D-band;

D O I：

10.1109/PAWR56957.2023.10046251

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a D-band monolithic microwave integrated circuit (MMIC) power amplifier fabricated in 0.1-mu m GaAs pseudomorphic high electron mobility transistor (pHEMT) technology. It uses a common-source topology and consists of 4 transistor stages with a gate width of 2x25 mu m. To reduce loss in the inter-stage matching circuits, a compact capacitor cell integrated with bias-line branches is designed. The amplifier shows a 3-dB gain bandwidth of 55 GHz from 105 GHz to 160 GHz and a saturated output power of 10 dBm at 160 GHz. It shows the highest operation frequency for the GaAs pHEMT process to our knowledge.

引用

收藏

页码：7 / 9

页数：3

相关论文

共 45 条

[31] A D-Band Power Amplifier With Four-Way Combining in 0.13-μm SiGe [J].

Aksoyak, Ibrahim Kagan ;

Moeck, Matthias ;

Kaynak, Mehmet ;

Ulusoy, Ahmet Cagri .

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2022, 32 (11) :1343-1346

[32] Design and Linearity Analysis of a D-band Power Amplifier in 0.13 μm SiGe BiCMOS Technology [J].

Hu, Z. ;

Sarris, G. ;

De Martino, C. ;

Spirito, M. ;

McCune, E. .

2017 IEEE COMPOUND SEMICONDUCTOR INTEGRATED CIRCUIT SYMPOSIUM (CSICS), 2017,

[33] Multi-Cascode Cell Design for Increased Broadband Power 0.1μm GaAs pHEMT MMICs up to V-Band [J].

Shinghal, Priya ;

Duff, Christopher I. ;

Sloan, Robin ;

Cochran, Steven .

2015 IEEE MTT-S INTERNATIONAL MICROWAVE AND RF CONFERENCE (IMARC), 2015, :365-368

[34] A 16.5-dBm D-Band Eight-Way Power Amplifier Utilizing Cascaded Transformers in 40-nm Bulk CMOS [J].

Trinh, Van-Son ;

Song, Jeong-Moon ;

Park, Jung-Dong .

IEEE MICROWAVE AND WIRELESS TECHNOLOGY LETTERS, 2024, 34 (08) :1019-1022

[35] A 71-80 GHz Medium Power Amplifier Using 4-mil 0.15-μm GaAs-PHEMT Technology [J].

Tsai, Zuo-Min ;

Lin, Kun-You ;

Wang, Huei .

ASIA-PACIFIC MICROWAVE CONFERENCE 2011, 2011, :1130-1133

[36] A Concurrent 26/48 GHz Low-Noise Amplifier With an Optimal Dual-Band Noise Matching Method Using GaAs 0.15 μm pHEMT [J].

Lee, Sunwoo ;

Seo, Wonwoo ;

Kim, Sunghyuk ;

Ko, Byunghun ;

Lee, Songjune ;

Kim, Min-Su ;

Kim, Junghyun .

IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS, 2024, 71 (03) :1096-1100

[37] D-Band SiGe BiCMOS Power Amplifier With 16.8 dBm P1dB and 17.1% PAE Enhanced by Current-Clamping in Multiple Common-Base Stages [J].

Petricli, Ibrahim ;

Riccardi, Domenico ;

Mazzanti, Andrea .

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2021, 31 (03) :288-291

[38] An 18.6-dBm, 8-way-combined D-band Power Amplifier with 21.6% PAE in 22-nm FD-SOI CMOS [J].

Chien, Jeff Shih-Chieh ;

Lam, Eythan ;

Buckwalter, James F. .

2023 IEEE BICMOS AND COMPOUND SEMICONDUCTOR INTEGRATED CIRCUITS AND TECHNOLOGY SYMPOSIUM, BCICTS, 2023, :179-182

[39] A 1-W Ka-band power amplifier using 0.15-μm InGaAs/GaAs E-mode pHEMT technology [J].

Lee, Hui Dong ;

Park, Jeongsoo ;

Kong, Sunwoo ;

Kim, Kwang-Seon ;

Lee, Kwang Chun ;

Park, Bonghyuk ;

Kim, Jeong-Geun .

MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 2019, 61 (07) :1706-1711

[40] A D-Band Power Amplifier With 60-GHz Large-Signal Bandwidth and 7.6% Peak PAE in 28-nm CMOS [J].

Yan, Zheng ;

Chen, Jixin ;

Chen, Zhe ;

Tang, Dawei ;

Li, Zekun ;

Zhang, Rui ;

Zhou, Peigen ;

Hong, Wei .

IEEE MICROWAVE AND WIRELESS TECHNOLOGY LETTERS, 2024, 34 (05) :540-543

← 1 2 3 4 5 →