共 41 条
- [21] A Ka-Band 25-dBm Output Power High Efficiency Monolithic Doherty Power Amplifier in 0.15-μm GaAs E-mode pHEMT Process 2017 IEEE ASIA PACIFIC MICROWAVE CONFERENCE (APMC), 2017, : 984 - 987
- [22] A Millimeter-Wave Ultra-Wide Band Power Amplifier in 0.15-μm GaAs pHEMT for 5G Communication 2022 ASIA-PACIFIC MICROWAVE CONFERENCE (APMC), 2022, : 97 - 99
- [23] D-Band Power Amplifier with 27 dBm Peak Output Power and 14.9% PAE in 250-nm InP HBT Technology 2023 IEEE BICMOS AND COMPOUND SEMICONDUCTOR INTEGRATED CIRCUITS AND TECHNOLOGY SYMPOSIUM, BCICTS, 2023, : 94 - 97
- [24] A 28-GHz 28.5-dBm power amplifier using 0.15-μm InGaAs E-mode pHEMT technology 2018 INTERNATIONAL SOC DESIGN CONFERENCE (ISOCC), 2018, : 257 - 258
- [25] A 3-Stacked 10.2 dBm OP1dB D-Band Power Amplifier in 22 nm FDSOI for 6G Communication 2023 ASIA-PACIFIC MICROWAVE CONFERENCE, APMC, 2023, : 312 - 314
- [26] An Efficient and Linear 24.4dBm Ka-Band GaAs Power Amplifier for 5G Communication 2021 IEEE INTERNATIONAL SYMPOSIUM ON RADIO-FREQUENCY INTEGRATION TECHNOLOGY (RFIT), 2021,
- [27] A W-band Frequency Tripler with 8-dBm Output Power Using 0.25-μm GaAs pHEMT Process 2022 IEEE MTT-S INTERNATIONAL MICROWAVE WORKSHOP SERIES ON ADVANCED MATERIALS AND PROCESSES FOR RF AND THZ APPLICATIONS, IMWS-AMP, 2022,
- [29] Design and Linearity Analysis of a D-band Power Amplifier in 0.13 μm SiGe BiCMOS Technology 2017 IEEE COMPOUND SEMICONDUCTOR INTEGRATED CIRCUIT SYMPOSIUM (CSICS), 2017,
- [30] Multi-Cascode Cell Design for Increased Broadband Power 0.1μm GaAs pHEMT MMICs up to V-Band 2015 IEEE MTT-S INTERNATIONAL MICROWAVE AND RF CONFERENCE (IMARC), 2015, : 365 - 368