A 160-GHz, 10-dBm power amplifier for D-band communication in 0.1-μm GaAs pHEMT

被引：3

作者：

Soma, Tatsuya ^{[1
]}

Ito, Masaharu ^{[1
]}

Wada, Yasushi ^{[1
]}

机构：

[1] NEC Corp Ltd, Kawasaki, Kanagawa, Japan

来源：

2023 IEEE TOPICAL CONFERENCE ON RF/MICROWAVE POWER AMPLIFIERS FOR RADIO AND WIRELESS APPLICATIONS | 2023年

关键词：

GaAs; pHEMT; Amplifier; D-band;

D O I：

10.1109/PAWR56957.2023.10046251

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a D-band monolithic microwave integrated circuit (MMIC) power amplifier fabricated in 0.1-mu m GaAs pseudomorphic high electron mobility transistor (pHEMT) technology. It uses a common-source topology and consists of 4 transistor stages with a gate width of 2x25 mu m. To reduce loss in the inter-stage matching circuits, a compact capacitor cell integrated with bias-line branches is designed. The amplifier shows a 3-dB gain bandwidth of 55 GHz from 105 GHz to 160 GHz and a saturated output power of 10 dBm at 160 GHz. It shows the highest operation frequency for the GaAs pHEMT process to our knowledge.

引用

页码：7 / 9

页数：3

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