A 160-GHz, 10-dBm power amplifier for D-band communication in 0.1-μm GaAs pHEMT

被引：3
|
作者：
Soma, Tatsuya [1 ]
Ito, Masaharu [1 ]
Wada, Yasushi [1 ]
机构：
[1] NEC Corp Ltd, Kawasaki, Kanagawa, Japan
来源：
2023 IEEE TOPICAL CONFERENCE ON RF/MICROWAVE POWER AMPLIFIERS FOR RADIO AND WIRELESS APPLICATIONS | 2023年
关键词：
GaAs; pHEMT; Amplifier; D-band;
D O I：
10.1109/PAWR56957.2023.10046251
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents a D-band monolithic microwave integrated circuit (MMIC) power amplifier fabricated in 0.1-mu m GaAs pseudomorphic high electron mobility transistor (pHEMT) technology. It uses a common-source topology and consists of 4 transistor stages with a gate width of 2x25 mu m. To reduce loss in the inter-stage matching circuits, a compact capacitor cell integrated with bias-line branches is designed. The amplifier shows a 3-dB gain bandwidth of 55 GHz from 105 GHz to 160 GHz and a saturated output power of 10 dBm at 160 GHz. It shows the highest operation frequency for the GaAs pHEMT process to our knowledge.
引用
收藏
页码：7 / 9
页数：3
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