Variation in thermal stability of Ge1-xSnx films for infrared device applications

被引:2
作者
Lemire, Amanda N. [1 ]
Grossklaus, Kevin A. [1 ]
Vandervelde, Thomas E. [1 ]
机构
[1] Tufts Univ, Elect & Comp Engn Dept, Renewable Energy & Appl Photon Labs, 161 Coll Ave, Medford, MA 02155 USA
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 2023年 / 41卷 / 05期
基金
美国国家科学基金会;
关键词
GESN; GENERATION; THICKNESS; LAYER;
D O I
10.1116/6.0002680
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
We report on changes in Ge1-xSnx films (0.065 = x = 0.144) after short high-temperature anneals. Films were grown by molecular beam epitaxy on (001) Ge wafers, rapidly annealed, and characterized by x-ray diffraction, Raman spectroscopy, and optical microscopy. Sn segregated to the surface after a maximum temperature is inversely related to the Sn content. Lower content films showed little to no improvement in crystal quality below segregation temperatures, while higher content and partially relaxed films demonstrated improved uniformity for moderate annealing.
引用
收藏
页数:8
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共 22 条
  • [1] [Anonymous], 2023, GROUP 4 MIDINFRARED
  • [2] Microstructuring to Improve the Thermal Stability of GeSn Layers
    Bonino, Valentina
    Pauc, Nicolas
    Calvo, Vincent
    Frauenrath, Marvin
    Hartmann, Jean-Michel
    Chelnokov, Alexei
    Reboud, Vincent
    Rosenthal, Martin
    Segura-Ruiz, Jaime
    [J]. ACS APPLIED MATERIALS & INTERFACES, 2022, 14 (19) : 22270 - 22277
  • [3] Thickness-dependent behavior of strain relaxation and Sn segregation of GeSn epilayer during rapid thermal annealing
    Cai, Hongjie
    Qian, Kun
    An, Yuying
    Lin, Guangyang
    Wu, Songsong
    Ding, Haokun
    Huang, Wei
    Chen, Songyan
    Wang, Jianyuan
    Li, Cheng
    [J]. JOURNAL OF ALLOYS AND COMPOUNDS, 2022, 904
  • [4] Material characterization of high Sn-content, compressively-strained GeSn epitaxial films after rapid thermal processing
    Chen, Robert
    Huang, Yi-Chiau
    Gupta, Suyog
    Lin, Angie C.
    Sanchez, Errol
    Kim, Yihwan
    Saraswat, Krishna C.
    Kamins, Theodore I.
    Harris, James S.
    [J]. JOURNAL OF CRYSTAL GROWTH, 2013, 365 : 29 - 34
  • [5] Band gap and strain engineering of pseudomorphic Ge1-x-ySixSny alloys on Ge and GaAs for photonic applications
    Fernando, Nalin S.
    Carrasco, Rigo A.
    Hickey, Ryan
    Hart, John
    Hazbun, Ramsey
    Schoeche, Stefan
    Hilfiker, James N.
    Kolodzey, James
    Zollner, Stefan
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2018, 36 (02):
  • [6] Direct bandgap cross-over point of Ge1-ySny grown on Si estimated through temperature-dependent photoluminescence studies
    Harris, Thomas R.
    Ryu, Mee-Yi
    Yeo, Yung Kee
    Wang, Buguo
    Senaratne, C. L.
    Kouvetakis, John
    [J]. JOURNAL OF APPLIED PHYSICS, 2016, 120 (08)
  • [7] Sn composition graded GeSn photodetectors on Si substrate with cutoff wavelength of 3.3 μm for mid-infrared Si photonics
    Li, Mingming
    Zheng, Jun
    Liu, Xiangquan
    Zhu, Yupeng
    Niu, Chaoqun
    Pang, Yaqing
    Liu, Zhi
    Zuo, Yuhua
    Cheng, Buwen
    [J]. APPLIED PHYSICS LETTERS, 2022, 120 (12)
  • [8] A Review of Advances in Thermophotovoltaics for Power Generation and Waste Heat Harvesting
    Licht, Abigail
    Pfiester, Nicole
    DeMeo, Dante
    Chivers, John
    Vandervelde, Thomas E.
    [J]. MRS ADVANCES, 2019, 4 (41-42) : 2271 - 2282
  • [9] Ge-on-Si optoelectronics
    Liu, Jifeng
    Camacho-Aguilera, Rodolfo
    Bessette, Jonathan T.
    Sun, Xiaochen
    Wang, Xiaoxin
    Cai, Yan
    Kimerling, Lionel C.
    Michel, Jurgen
    [J]. THIN SOLID FILMS, 2012, 520 (08) : 3354 - 3360
  • [10] Material candidates for thermally robust applications of selective thermophotovoltaic emitters
    Oh, Minsu
    McElearney, John
    Lemire, Amanda
    Vandervelde, Thomas E.
    [J]. PHYSICAL REVIEW MATERIALS, 2022, 6 (11)