Arresting Ion Migration from the ETL Increases Stability in Infrared Light Detectors Based on III-V Colloidal Quantum Dots

被引:9
|
作者
Xia, Pan [1 ]
Zhu, Tong [1 ]
Imran, Muhammad [1 ]
Pina, Joao [1 ]
Atan, Ozan [1 ]
Najarian, Amin Morteza [1 ]
Chen, Hao [1 ]
Zhang, Yangning [1 ]
Jung, Euidae [1 ]
Biondi, Margherita [1 ]
Vafaie, Maral [1 ]
Li, Chongwen [1 ]
Grater, Luke [1 ]
Khatri, Aayushi [2 ]
Singh, Ajay [2 ]
Hoogland, Sjoerd [1 ]
Sargent, Edward [1 ]
机构
[1] Univ Toronto, Dept Elect & Comp Engn, 10 Kings Coll Rd, Toronto, ON M5S 3G4, Canada
[2] STMicroelectronics, Digital Front End Mfg & Technol, Technol Opt Sensors, Fremont, CA 94538 USA
基金
加拿大创新基金会; 加拿大自然科学与工程研究理事会; 加拿大健康研究院;
关键词
III-V colloidal quantum dots; charge transport layers; device operating stability; infrared photodetectors;
D O I
10.1002/adma.202310122
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
III-V colloidal quantum dots (CQDs) are of interest in infrared photodetection, and recent developments in CQDs synthesis and surface engineering have improved performance. Here this work investigates photodetector stability, finding that the diffusion of zinc ions from charge transport layers (CTLs) into the CQDs active layer increases trap density therein, leading to rapid and irreversible performance loss during operation. In an effort to prevent this, this work introduces organic blocking layers between the CQDs and ZnO layers; but these negatively impact device performance. The device is then, allowing to use a C60:BCP as top electron-transport layer (ETL) for good morphology and process compatibility, and selecting NiOX as the bottom hole-transport layer (HTL). The first round of NiOX-based devices show efficient light response but suffer from high leakage current and a low open-circuit voltage (Voc) due to pinholes. This work introduces poly[bis(4-phenyl) (2,4,6-trimethylphenyl)amine] (PTAA) with NiOX NC to form a hybrid HTL, an addition that reduces pinhole formation, interfacial trap density, and bimolecular recombination, enhancing carrier harvesting. The photodetectors achieve 53% external quantum efficiency (EQE) at 970 nm at 1 V applied bias, and they maintain 95% of initial performance after 19 h of continuous illuminated operation. The photodetectors retain over 80% of performance after 80 days of shelf storage. To improve the stability of III-V quantum dots-based infrared photodetector, this work addresses the issue of zinc ion migration, decreasing device performance. Using a hybrid NiOX/poly[bis(4-phenyl) (2,4,6-trimethylphenyl)amine (PTAA) hole transport layer and inversion of the device structure, this work achieves photodetectors with a quantum efficiency (EQE) of 53% at 970 nm and maintained 95% of their initial performance after 19 h of continuous illuminated operation.image
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页数:7
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