Effect of surface energy anisotropy on hole growth in a single-crystalline thin film: A phase-field study

被引：5

作者：

Verma, M. ^{[1
,2
]}

Mukherjee, R. ^{[1
]}

机构：

[1] Indian Inst Technol, Dept Mat Sci & Engn, Kanpur 208016, Uttar Pradesh, India

[2] Katholieke Univ Leuven, Dept Mat Engn, Kasteelpk Arenberg 44, B-3001 Leuven, Belgium

来源：

SCRIPTA MATERIALIA | 2023年 / 234卷

关键词：

Thin film dewetting; Surface energy anisotropy; Thin film; Phase-field model; CAPILLARY INSTABILITIES; PATTERNS; MODEL; SI;

D O I：

10.1016/j.scriptamat.2023.115572

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Prediction of the temporal evolution of a pre-existing hole on a solid-state thin film has important implications for self-organized nanoscale pattern formation. In this work, we employ a three-dimensional phase-field model to elucidate the mechanism of corner instability during capillary-driven hole growth in a single-crystalline free-standing thin film. We perform a systematic study to demonstrate the effect of crystalline anisotropy in surface energy, surface diffusivity, and film thickness on hole growth. Our simulations reveal that the instability during hole growth arises due to saturation of the rim height at the corner of the hole that is directly related to the arc length of the corner, specified by the anisotropy in surface energy. Our investigation further reveals the presence of a time-invariant shape of the corner with the onset of corner instability.

引用

页数：7

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