Effects of Deposition Power and Thermal Treatment on Ferroelectric Properties of Sputtered Hf0.5 Zr0.5O2

被引：7

作者：

Han, Changhyeon ^{[1
]}

Kwon, Ki Ryun ^{[1
]}

Yim, Jiyong ^{[1
]}

Kim, Jeonghan ^{[1
]}

Kim, Sangwoo ^{[1
]}

Jeong, Soi ^{[1
]}

Park, Eun Chan ^{[1
]}

You, Ji Won ^{[1
]}

Choi, Rino ^{[2
]}

Kwon, Daewoong ^{[1
]}

机构：

[1] Hanyang Univ, Dept Elect Engn, Seoul 04763, South Korea

[2] Inha Univ, Dept Mat Sci & Engn, Incheon 22212, South Korea

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2024年 / 71卷 / 05期

关键词：

Grain size; Annealing; Switches; Zirconium; Sputtering; Hafnium oxide; Capacitors; Charge defects; furnace annealing (FA); grain size; Hf-0.5 Zr0.5O2 (HZO); OXYGEN VACANCIES; POLARIZATION; FILMS;

D O I：

10.1109/TED.2024.3381103

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, we investigated the ferroelectric characteristics of Hf-0.5 Zr0.5O2 (HZO) deposited by radio frequency (RF) sputtering at various deposition powers and the impact of additional long-term furnace annealing (FA) after ferroelectric formation annealing. Significant improvements in the ferroelectric properties were clearly observed by reducing the deposition power and implementing FA. Based on the analysis of the distribution of oxygen defects in HZO, it was found that the enhanced ferroelectric properties due to lower deposition power and additional FA resulted from the reduction of oxygen defects, which prevented polarization switching by pinning the domains. Moreover, the ferroelectric characteristics were further improved by the transition from the nonferroelectric phase to the ferroelectric phase by FA. Material design guidelines for sputtered HZO are provided through the modulation of deposition power and thermal treatment.

引用

页码：3130 / 3134

页数：5

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